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Rapid insulated gate bipolar transistor

A technology of bipolar transistors and insulated gates, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as complex external drive circuits and weak forward conduction capabilities of devices, so as to eliminate negative resistance effects and improve work stability , the effect of small off-time

Active Publication Date: 2017-05-31
CHONGQING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to solve the problems in the prior art, such as weak forward conduction ability of the device and the need for a complex external drive circuit, to obtain an optimized compromise between the on-state loss and the off-state loss

Method used

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Examples

Experimental program
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Embodiment 1

[0047] The first conductivity type is selected as N type, and the second conductivity type is selected as P type.

[0048] like Figure 4As shown, a fast insulated gate bipolar transistor is characterized in that it includes an anode contact area 1, a P+ type anode area 2, an N type anode buffer area 3, an N type drift area 4, a P type cathode well area 5, an N+ type cathode region 6, P+ type cathode region 7, cathode contact region 8, gate dielectric layer 9, gate contact region 10, P type anode well region 11, N+ type anode region 12, anode auxiliary gate dielectric layer 13 and anode auxiliary Gate contact region 14.

[0049] The N-type drift region 4 covers the N-type anode buffer zone 3 .

[0050] The P-type cathode well region 5 covers part of the surface above the N-type drift region 4 .

[0051] The N+ type cathode region 6 and the P+ type cathode region 7 cover part of the surface above the P type cathode well region 5 .

[0052] The cathode contact region 8 cover...

Embodiment 2

[0062] The first conductivity type is selected as N type, and the second conductivity type is selected as P type.

[0063] like Figure 5 As shown, a fast insulated gate bipolar transistor is characterized in that it includes an anode contact area 1, a P+ type anode area 2, an N type anode buffer area 3, an N type drift area 4, a P type cathode well area 5, an N+ Type cathode region 6, P+ type cathode region 7, cathode contact region 8, gate dielectric layer 9, gate contact region 10, P type anode well region 11, N+ type anode region 12 and anode auxiliary gate dielectric layer 13.

[0064] The N-type drift region 4 covers the N-type anode buffer zone 3 .

[0065] The P-type cathode well region 5 covers part of the surface above the N-type drift region 4 .

[0066] The N+ type cathode region 6 and the P+ type cathode region 7 cover part of the surface above the P type cathode well region 5 .

[0067] The cathode contact region 8 covers the P+ type cathode region 7 , and the...

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Abstract

The invention discloses a rapid insulated gate bipolar transistor. By adoption of an anode self-driven auxiliary gate design structure, a negative resistance effect in electrification of a device can be eliminated on the premise of short power-off time of the device, operation stability of the device is improved, and a great trade-off relation between power-on loss and power-off loss can be obtained. In addition, by a self-driven design of the anode auxiliary gate structure, the requirement of a conventional auxiliary gate electrode anode structure which requires extra drive circuits can be eliminated.

Description

technical field [0001] The invention relates to a conductance modulation high-voltage power device in the technical field of semiconductor power electronic devices, in particular to a fast insulated gate bipolar transistor. Background technique [0002] Insulated gate bipolar transistor (IGBT: Lateral Insulated Gate Bipolar Transistor) has the advantages of simple driving, large current capability, and high withstand voltage capability, but its turn-off speed is much faster than that of double-diffused metal-oxide-semiconductor effect transistors (DMOS, Double-diffused MOSFET) has a slow turn-off speed, resulting in large switching losses, which affects the application of edge-gate bipolar transistors in power electronic systems. [0003] There are three main methods to increase the turn-off speed of IGBT devices to reduce switching losses: [0004] One is to reduce the lifetime of non-equilibrium carriers in the drift region and increase the recombination rate to increase ...

Claims

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Application Information

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IPC IPC(8): H01L29/739
CPCH01L29/7395
Inventor 陈文锁蒲贤洁廖瑞金曾正邵伟华李辉
Owner CHONGQING UNIV
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