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A method for detecting photoresist damage in real time for a defect detection machine

A technology of defect detection and light detection, which is applied in the field of defect detection, can solve problems such as time-consuming and labor-intensive, failure to detect in time, damage, etc., and achieve the effect of avoiding production loss and preventing photoresist damage

Active Publication Date: 2018-10-16
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology

[0007] However, the above method is not only time-consuming and labor-intensive, but also cannot accurately reflect the degree of damage to the photoresist when the machine actually scans the product in real time, so it is easy to detect and prevent the machine from causing damage to the product with photoresist , resulting in a loss of production

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  • A method for detecting photoresist damage in real time for a defect detection machine
  • A method for detecting photoresist damage in real time for a defect detection machine

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Embodiment Construction

[0026] The invention provides a method for detecting photoresist damage in real time for a defect detection machine, which can detect and prevent photoresist damage automatically, efficiently and in time. The method of the present invention includes: using a double-lens defect detection machine, before performing formal defect scanning, double-lens scanning is performed on a specific area of ​​the wafer surface with photoresist; Calculation comparison: Judging according to the comparison results of image calculation, when the difference between images reaches the threshold, a photoresist damage signal is sent to avoid formal defect scanning, otherwise, a photoresist normal signal is sent to perform formal defect scanning.

[0027] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0028] It should be noted that in the following specific embodiments, when describing the embodiments of the p...

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Abstract

The present invention discloses a method for detecting photoresistance damaging of a defect detection machine stand in real time. The method comprises: prior to the formal defect scanning, a wafer surface special area with photoresist is subjected to dual-lens scanning, the obtained dual-lens scanning result is subjected to image operation contrast, it is determined that the difference between images reaches a threshold according to the image operation contrast result, the photoresistance damaging signals are emitted to avoid performing the formal defect scanning, and conversely, the photoresistance normal signals are emitted to perform formal defect scanning. The method for detecting photoresistance damaging of a defect detection machine stand in real time can automatically, accurately and timely detect the damaging condition of the machine stand to the photoresistance and can prevent the likely caused photoresistance damaging in advance through the detection result so as to timely avoid the production loss.

Description

technical field [0001] The present invention relates to the technical field of defect detection in the integrated circuit manufacturing process, and more specifically, to a defect detection machine that can detect photoresist damage in real time and can detect defects when scanning defects on a complete wafer with photoresist. methods of prevention. Background technique [0002] Photoresist is a light sensitive material. Different photoresists will change their chemical properties after being exposed to a light source of a specific wavelength, and then through the action of a developer, the photoresist can form the pattern required for the process. [0003] Due to the photoresist's sensitivity to light, if it encounters other light sources during the production process, it may cause damage to the photoresist due to changes in its properties or shape. [0004] At present, the phenomenon of light source irradiation is common in the inspection process of product inspection ma...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L22/12
Inventor 何广智龙吟倪棋梁顾晓芳
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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