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PMOS device and integrated process method

A process method and device technology, applied in the field of PMOS devices and their integrated processes, can solve problems such as complex processes

Active Publication Date: 2017-01-04
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] As mentioned above, in the PMOS device integration process method according to the prior art, its N-well implantation and P-type lightly doped source-drain implantation regions are respectively formed, so the process is relatively complicated

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Embodiment Construction

[0033] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0034] Figure 7 to Figure 11 Each step of the PMOS device integration process method according to the preferred embodiment of the present invention is schematically shown.

[0035] like Figure 7 to Figure 11 As shown, the PMOS device integration process method according to a preferred embodiment of the present invention includes:

[0036] Step 1: forming a high-voltage N-well region 10 and a low-voltage N-well region 20 separated by shallow trenches in the P-type substrate 100;

[0037] Preferably, the bulk doping concentration of the P-type substrate 100 is 1e14-1e16cm -3 , the doping concentration of the high-voltage N-well region 10 and the low-voltage N-well region 20 is 1e16-1e18cm -3 .

[0038] The second step: forming a gate struct...

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Abstract

A PMOS device and integrated process method comprises the steps of: forming a high voltage and low voltage N well region separated by a shallow groove in a P type substrate; forming a gate structure respectively on the high voltage and low voltage N well region; coating a first photoresist layer, defining a first photoresist pattern, removing the photoresist on the high voltage N well region, executing ion injection on the high voltage N well region to form a lightly doped diffusion region of the high voltage PMOS device; removing the photoresist to form a sidewall of the gate structure on the high voltage and low voltage N well region, coating a second photoresist layer, defining a second photoresist pattern by use of a template and removing the photoresist on the high voltage and low voltage N well region at the same time, executing ion injection into the high voltage and low voltage N well region in an inclination angle with respect to the surface of the substrate to form a lightly doped diffusion region of the low voltage PMOS device, forming a second diffusion injection region around the lightly doped diffusion region of the low voltage PMOS device; forming a source leakage region of heavily doped high voltage PMOS and a source leakage region of heavily doped low voltage PMOS.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a PMOS device and an integrated process method thereof. Background technique [0002] Generally, during the integration process of HVPMOS (high voltage PMOS) and LVPMOS (low voltage PMOS) devices, due to the difference in device performance, it is necessary to form their N well implantation and PLDD (P type lightly doped diffusion implantation region) implantation respectively, but HVPMOS and LVPMOS devices Shared heavily doped source and drain implants. [0003] Figure 1 to Figure 6 A PMOS device integration process method according to the prior art is schematically shown. [0004] like Figure 1 to Figure 6 As shown, the PMOS device integration process method according to the prior art includes: forming a high-voltage N well region 10 and a low-voltage N well region 20 isolated by shallow trenches in a P-type substrate 100; A gate str...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8234H01L27/088
CPCH01L21/8234H01L21/823418H01L27/088
Inventor 李娟娟
Owner SHANGHAI HUALI MICROELECTRONICS CORP