A kind of deep ultraviolet semiconductor light-emitting diode and its preparation method

A technology of light-emitting diodes and semiconductors, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as complex processes, affecting internal quantum efficiency, and strict process requirements, to overcome strong absorption, improve light extraction efficiency, and simple process reliable effect

Active Publication Date: 2018-08-17
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method has strict requirements on the process and will affect the internal quantum efficiency
The light extraction efficiency of TM polar light can be directly increased through external micro-nano structures, such as photonic crystal structure, surface roughening, sidewall roughening or surface plasmon, but the processes of these methods are complicated. , the effect of light extraction is limited
A recently reported prior art of metal inclined sidewall structure technology shows a tendency to increase the light extraction efficiency of TM polar light, but due to the strong absorption of metals on deep ultraviolet light, the inclined sidewall structure the role of the

Method used

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  • A kind of deep ultraviolet semiconductor light-emitting diode and its preparation method
  • A kind of deep ultraviolet semiconductor light-emitting diode and its preparation method
  • A kind of deep ultraviolet semiconductor light-emitting diode and its preparation method

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Effect test

Embodiment 1

[0054] The DUV LED with the same-side flip-chip structure in this embodiment, from bottom to top, is a sapphire substrate 101, a nucleation layer 102, an undoped aluminum nitride layer 103, an n-type aluminum gallium nitride layer 104, and an n-type aluminum gallium nitride layer. The N-type electrode 201 above the AlGaN layer 104, the active layer 105, the electron blocking layer 106, the p-type hole conduction layer 107, the suspended conductive layer 109 of the graphene layer and the P-type electrode 202; One side of the surface of the p-type hole conduction layer 107 forms a micro-nano structure array with inclined sidewalls, and a suspended conductive layer 109 with a graphene layer is prepared on the top of the micro-nano structure array with inclined sidewalls. Air remains between the micro-nano structures.

[0055] The preparation method of the DUV LED with the same-side flip-chip structure in this embodiment, the steps are as follows:

[0056] The first step, the pre...

Embodiment 2

[0069] The DUV LED with vertical flip-chip structure in this embodiment consists of N-type electrode 201, n-type AlGaN layer 104, active layer 105, electron blocking layer 106, p-type hole conducting layer 107, sulfur The suspended conductive layer 109 of the molybdenum layer and the P-type electrode 202 are formed; on the surface side of the p-type hole conduction layer 107 of the epitaxial sheet, a micro-nano structure array with inclined sidewalls is formed, and the micro-nano structure array of inclined sidewalls A suspended conductive layer 109 with a molybdenum sulfide layer is prepared on the top, and air is kept between the micro-nano structures with inclined side walls.

[0070] The preparation method of the DUV LED with the same-side flip-chip structure in this embodiment, the steps are as follows:

[0071] The first step, the preparation of the basic epitaxial layer structure of DUV LED:

[0072] On the silicon carbide substrate 101, the epitaxial nucleation layer 10...

Embodiment 3

[0084] Except that the substrate is a silicon substrate, the shape of the micro-nano structure array with inclined side walls has a height of 4000 nanometers, an inclination angle of 30 degrees, the array is arranged in a hexagonal lattice, and the lithography technology is nanoimprint lithography Technology, except that the suspended conductive layer is a carbon nanotube thin film layer, the others are the same as in embodiment 1.

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Abstract

The invention provides a deep ultraviolet semiconductor light-emitting diode (DUV LED) and a production method thereof and relates to semiconductor devices. The light-emitting diode comprises a homolateral inverted structure and a vertical inverted structure which are characterized in that a micro-nano structure array with oblique side walls is formed in one side of the surface of a p-type hole conduction layer of an epitaxial wafer via photolithography and etching techniques; a suspended conductive layer is arranged at the top of the micro-nano structure array with oblique side walls; air is retained between micro-nano structures with the oblique side walls. Through the deep ultraviolet semiconductor light-emitting diode, the air is retained between the micro-nano structures with the oblique side walls; total reflection and Fresnel scattering of the oblique side walls and the air interface are used for scattering the deep ultraviolet light, so that the defect that the effect of the oblique side wall structure is seriously influenced because of the strong absorption effect of the metal of metal reflecting mirrors on the deep ultraviolet light in the prior art can be overcome; the light extraction efficiency of DUV LED is improved to a maximum extent.

Description

technical field [0001] The technical solution of the invention relates to a semiconductor device, specifically a deep ultraviolet semiconductor light emitting diode and a preparation method thereof. Background technique [0002] Deep ultraviolet semiconductor light-emitting diode (referred to as DUV LED) is a semiconductor light-emitting device based on AlGaN material with a light-emitting wavelength of 200 nm to 350 nm. It has a series of advantages of long life, low working voltage, smart design and non-toxic. With the rapid development in recent years, it has been widely used in medical treatment, printing, disinfection and water treatment, and is gradually replacing traditional mercury lamps. [0003] Although AlGaN-based DUV LEDs have made a huge breakthrough, it is reported that the highest external quantum efficiency is still only 12%, and the industrialization may only be 5%. Such a low external quantum efficiency seriously affects the further application and promo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/20H01L33/00
CPCH01L33/0075H01L33/02H01L33/20
Inventor 张勇辉张紫辉徐庶耿翀毕文刚花中秋
Owner HEBEI UNIV OF TECH
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