A kind of s-doped siO2 microsphere and preparation method thereof
A technology of microspheres and preparation technology, applied in the field of nanomaterials, to achieve the effect of simple operation, simple process and smooth surface
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[0023] S-doped SiO according to the present invention 2 The preparation method of microsphere material, its step is as follows:
[0024] The first step: pre-clean the loaded quartz tube and the substrate substrate. The quartz tube is wiped and cleaned with alcohol cotton. The substrate substrate needs to be ultrasonicated with acetone first, and then cleaned with deionized water;
[0025] The second step: mix Si powder and S powder evenly and grind them as a reaction source, put them into the closed end of a single-opened quartz tube, and place the pretreated substrate along the quartz tube at a distance of 10- At the position of 30 cm, finally put the quartz tube with reaction source and substrate into the tube furnace and pass the protective gas Ar;
[0026] Step 3: Heat the tube furnace to the desired temperature, keep it warm for 1.5-2 hrs, and turn off the protective gas Ar after the reaction is completed. After taking out the quartz tube and cooling it down to room tem...
Embodiment 1
[0036] 0.7 g of sulfur powder with a purity of 99.99% and 0.7 g of silicon powder with a purity of 99.99% were evenly ground with a mortar and mixed thoroughly, and then put into one end of the quartz tube as a reaction source; the n-type Si (111) substrate was cleaned Place the quartz tube at a distance of 20-25 cm from the reaction source along the quartz tube, put the quartz tube with the reaction source and the substrate into the tube furnace, and reversely feed 20 sccm of protective gas Ar; turn on the heating component of the tube furnace , so that the reaction source temperature in the furnace reaches 1000 °C, the substrate temperature is about 890-940 °C, and maintain a constant temperature for 1.5 hrs; after the experiment, stop the gas flow, take out the quartz tube and lower it to room temperature under atmospheric conditions, that is, grow on the substrate White S-doped SiO 2 Microspheres, see figure 1 . figure 1 Medium S-doped SiO 2The microsphere diameter is 0...
Embodiment 2
[0038] 0.7 g of sulfur powder with a purity of 99.99% and 0.7 g of silicon powder with a purity of 99.99% were evenly ground with a mortar to make them fully mixed and then put into one end of the quartz tube as a reaction source; the quartz glass sheet was cleaned as a substrate and placed on the Put the quartz tube equipped with the reaction source and the substrate into the tube furnace at a distance of 21-26 cm from the reaction source along the quartz tube, and reversely feed 20 sccm of protective gas Ar; turn on the heating component of the tube furnace, Make the reaction source temperature in the furnace reach 1000 °C, the substrate temperature is about 890-940 °C, and keep the constant temperature for 2 hrs; stop the gas supply after the experiment, take out the quartz tube and lower it to room temperature under atmospheric conditions, that is, grow on the substrate White S-doped SiO 2 Microspheres. The diameter of the sample is 0.5-2 μm, and the surface is relatively...
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