Frequency point-adjustable THz wave modulator based on transistor with high electronic mobility

Abstract

The invention belongs to the technical field of electromagnetic functional devices and specifically relates to a frequency point-adjustable THz wave modulator based on a transistor with high electronic mobility. The modulator comprises a sapphire substrate layer, a GaN buffer layer, and an AlGaN battier layer which are stacked successively from bottom to top, as well as an Ohm metal layer and a Schottky metal layer disposed on the AlGaN battier layer, wherein the Ohm metal layer and the Schottky metal layer are covered by an isolation medium layer; a meta-material layer is disposed on the upper surface of the isolation medium layer; the meta-material layer is composed of multiple metal artificial structure units which are arranged cyclically; the metal artificial structure units form an upper I shape and a lower I shape and are distributed in axial symmetry along the Ohm metal layer; and the long edge of one I shape is connected to source and drain electrodes, and the long edge of the other I shape is taken as a frequency point tuning edge of the THz wave modulator. According to the invention, modulation frequency points of the THz wave modulator are adjustable in a specific frequency band, so that the modulator is applicable to applications such as THz wireless communication systems with different frequency points.

Description

technical field [0001] The invention belongs to the technical field of electromagnetic functional devices, and in particular relates to a frequency point adjustable terahertz wave modulator based on high electron mobility transistors. Background technique [0002] Terahertz wave (terahertz wave) refers to electromagnetic waves with a frequency of 0.1-10 THz and a wavelength of 30 μm-3 mm. For a long time, due to the lack of stable and efficient terahertz radiation sources and effective terahertz detection methods, terahertz waves have not received enough attention and development for a long time, hence the name "THz-gap". At present, the main problem restricting the development and application of terahertz technology is the lack of stable and excellent terahertz wave radiation sources and terahertz functional devices, such as filtering and modulation. Therefore, exploring and developing terahertz radiation sources and functional devices that have high power, high efficiency...

AI Technical Summary

Problems solved by technology

If it is necessary to adjust its frequency point, the entire unit needs to be scaled up or down in proportion, and the entire device structure and process parameters need to be

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