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Enhanced stacked esd circuit and mixed voltage input and output interface circuit

A stacked and enhanced technology, applied in the direction of circuit devices, emergency protection circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, etc., can solve the problem of weak discharge current capacity and achieve enhanced discharge Current capability, increasing current, and increasing the effect of gate voltage

Active Publication Date: 2018-09-25
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide an enhanced stacked ESD circuit and a mixed voltage input and output interface circuit for solving the problem of weak discharge current capability of the traditional stacked ESD circuit

Method used

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  • Enhanced stacked esd circuit and mixed voltage input and output interface circuit
  • Enhanced stacked esd circuit and mixed voltage input and output interface circuit
  • Enhanced stacked esd circuit and mixed voltage input and output interface circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0097] Such as image 3 As shown, the present embodiment provides an enhanced stacked ESD circuit 2, and the ESD circuit includes:

[0098] an internal ESD bus for providing voltage to said ESD circuit;

[0099] A voltage divider circuit, connected to the internal ESD bus, for dividing the voltage of the internal ESD bus;

[0100] The RC detection circuit is connected with the internal ESD bus, and is used to realize that when the voltage of the internal ESD bus is a normal power-on pulse, the RC detection circuit outputs a high level, and when the voltage of the internal ESD bus is a high-voltage transient pulse, the The RC detection circuit outputs a low level;

[0101] An inverter circuit is connected to the RC detection circuit and the discharge circuit respectively, and is used for inverting the voltage output by the RC detection circuit, thereby controlling the opening and closing of the discharge circuit;

[0102] The bias voltage transmission circuit is connected wi...

Embodiment 2

[0125] Such as Figure 5 As shown, this embodiment provides a mixed voltage input and output interface circuit, which is connected between the chip pin and the external circuit, and the interface circuit includes:

[0126] The ESD protection circuit located on the pins of the chip is connected between the power supply terminal VDD and the ground terminal VSS for ESD protection of the chip;

[0127] The N×VDD input and output buffer circuit is respectively connected to the power supply terminal, the ground terminal and the chip pin, and is used to realize the signal transmission between the chip pin and the external circuit; wherein, the ESD protection circuit includes:

[0128]The second forward-biased diode D2 is connected between one end of the chip pin and the enhanced stacked ESD circuit, and is used to transmit the forward high voltage transient pulse on the chip pin to the enhanced stacked ESD circuit;

[0129] The third reverse-biased diode D3 is connected between the ...

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Abstract

The invention provides an enhancement type stacked ESD circuit and a mixed voltage input-output interface circuit. The ESD circuit adds a bias voltage transmission circuit and a high-voltage transmission circuit based on the conventional stacked circuit; the bias voltage transmission circuit is respectively connected to a bleeder circuit and a phase inverter circuit; when voltage of an inner ESD bus is normal electrical pulse, the bias voltage transmission circuit is opened to transmit output voltage of the bleeder circuit to the phase inverter circuit; the high-voltage transmission circuit is respectively connected to the inner ESD bus and a leakage circuit; when the voltage of the inner ESD bus is high-voltage transient pulse, the high-voltage transmission circuit is opened to transmit a high-voltage signal generated by the high-voltage transient pulse to the leakage circuit, so that the current discharge capacity of the ESD circuit is increased. Through the enhancement type stacked ESD circuit and the mixed voltage input-output interface circuit, a problem of poor current discharge capacity of the conventional stacked ESD circuit is solved.

Description

technical field [0001] The invention belongs to the field of electrostatic protection circuits, in particular to an enhanced stacked ESD circuit and a mixed voltage input and output interface circuit. Background technique [0002] Electrostatic Discharge (Electrostatic Discharge) refers to the charge transfer caused by objects with different electrostatic potentials approaching or directly contacting each other. The circuit of integrated circuit components is reduced, the withstand voltage is reduced, and the circuit area is reduced, which weakens the device's ability to withstand electrostatic shocks. Static Electric Field (Static Electric Field) and electrostatic current (ESD current) have become the fatal killers of these high-density components. At the same time, the widespread use of high-insulation materials such as a large number of plastic products has greatly increased the chance of generating static electricity. Static electricity can be generated in daily life su...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02H9/04
CPCH02H9/047
Inventor 李晓云陈后鹏王倩李喜雷宇宋志棠
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI