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Single crystal ingot, semiconductor wafer and method of manufacturing semiconductor wafers

A semiconductor, single crystal technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc.

Active Publication Date: 2017-02-22
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Meeting these requirements becomes more challenging when progressing to larger boule lengths and larger wafer diameters

Method used

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  • Single crystal ingot, semiconductor wafer and method of manufacturing semiconductor wafers
  • Single crystal ingot, semiconductor wafer and method of manufacturing semiconductor wafers
  • Single crystal ingot, semiconductor wafer and method of manufacturing semiconductor wafers

Examples

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Embodiment Construction

[0016] In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and in which are shown by way of illustrations specific embodiments in which the disclosure may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. For example, features illustrated or described with respect to one embodiment can be used on or in combination with other embodiments to yield still a further embodiment. The present disclosure is intended to cover such modifications and variations. The use of specific language to describe the examples should not be construed as limiting the scope of the claims. The figures are not to scale and are for illustration purposes only. For the sake of clarity, in the different figures, the same elements have been designated by corresponding reference numerals if not stated otherwise.

[0017...

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PUM

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Abstract

The disclosure relates to a single crystal ingot, a semiconductor wafer and a method of manufacturing semiconductor wafers. An embodiment of a method of manufacturing semiconductor wafers comprises forming a notch or a flat in a semiconductor ingot extending along an axial direction. A plurality of markings are formed in the semiconductor ingot. At least some of the plurality of markings at different positions along the axial direction are distinguishable from each other by a characteristic feature. The semiconductor ingot is then sliced into semiconductor wafers.

Description

Background technique [0001] In the front-end-of-line (FEOL) of manufacturing semiconductor regions of different conductivity types (eg, p-doped semiconductor regions and n-doped semiconductor regions), semiconductor doping processes are essential. In order to meet the requirements of specified device properties (eg breakdown voltage, breakdown strength or softness), precise and uniform doping of the semiconductor body (eg background doping of the semiconductor wafer) is required. Meeting these requirements becomes more challenging when progressing to larger boule lengths and larger wafer diameters. Contents of the invention [0002] The present disclosure relates to a method of manufacturing a semiconductor wafer. The method includes forming an axially extending notch or land in a semiconductor boule. The method further includes forming a plurality of marks in a periphery of the semiconductor boule. At least some of the plurality of markings at different positions along t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L23/544
CPCH01L21/02005H01L23/544H01L21/6836H01L2221/68327H01L2223/54413H01L2223/5442H01L2223/54426H01L2223/54433H01L2223/54453H01L2223/54493H01L21/78
Inventor J·弗伦德H·奥弗纳H-J·舒尔策
Owner INFINEON TECH AG