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light emitting device

A light-emitting device and light-emitting diode technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of broken wires 31, damage to the base 21 of the separated space, poor light-emitting devices, etc., and achieve improved strength and reliability. Effect

Active Publication Date: 2019-11-12
SEOUL SEMICONDUCTOR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, considering the structural characteristics and heat dissipation efficiency of the connecting wire 31, generally speaking, as shown in the figure, the area occupied by the lead wires 11 and 13 is also formed larger.
[0006] In the conventional light-emitting device having the above-mentioned structure, if an external impact or pressure is applied to the light-emitting device, a separation space between the first lead 11 and the second lead 13 (peripheral area of ​​the CC' line) occurs. ) the problem that the base 21 is damaged
In particular, when the substrate 21 in the area between the first lead 11 and the second lead 13 is damaged, the possibility of disconnection of the lead 31 is high, and the possibility of failure of the light emitting device is high.
However, when considering luminous efficiency and heat dissipation efficiency, there is a limit to reducing the area of ​​the cavity 25 or increasing the separation width of the leads 11, 13.

Method used

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Examples

Experimental program
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Effect test

experiment example

[0081] Figure 6 to Figure 8 It is a top view of an experimental example for explaining the effect of improving the intensity of the light-emitting device according to the embodiment of the present invention. This experimental example is used to illustrate the effect of improving the intensity of the light-emitting device of the present invention and preventing the decrease of the luminous intensity. The light-emitting device utilized in this experimental example has a 5×5mm 2 the size of. In addition, the light-emitting diode included in each light-emitting device has a thickness of 650×1300 μm 2 size LEDs.

no. 1 experiment example

[0083] The first experimental example shows the influence of the luminous intensity by the thickness of the reflector in the horizontal direction. if refer to Figure 6 , in samples 1 to 3, W2 is 5mm, and W1 is 4.6mm, 4.2mm and 4.0mm respectively. Table 1 below shows the luminous intensity of the LED, the luminous flux of the luminous device, and k-factor representing the ratio between the luminous intensity of the LED and the luminous flux of the luminous device. At this time, the k-factor is as follows.

[0084]

[0085] 【Table 1】

[0086]

[0087] According to the experimental example, even if the thickness of the reflector in the horizontal direction is increased and the width of the cavity is reduced from 4.6 mm to 4.0 mm, the k-factor shows almost the same level. That is, it can be seen that even if the width of the cavity is reduced to a level of 0.8 with respect to one side of the light-emitting device and the intensity of the light-emitting device is increase...

no. 2 experiment example

[0089] The second experimental example shows the test results of the strength of the light-emitting device based on the presence or absence of protrusions and depressions on the first lead and the second lead. Strength test results were derived using an automatic push-pull gauge system. Loaded parts such as Figure 7 Shown are points A and B. Table 2 below illustrates the strength test results according to the width of the cavity and the presence or absence of protrusions and depressions.

[0090] 【Table 2】

[0091]

[0092] According to the second experimental example, when there are protrusions and depressions on the leads, the strength increases in both the central portion and the outer portion of the separated regions of the leads. In addition, it can be seen that the increase rate of the intensity is the highest in the case of the light-emitting device including the structure in which the thickness of the reflector in the horizontal direction is increased, and the s...

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Abstract

A light emitting device is disclosed. The light-emitting device includes: a first lead wire and a second lead wire arranged apart from each other; a main body including a substrate, a reflector and a cavity; and a light-emitting diode arranged in the cavity, the first lead wire includes a lower first lead wire and a lower The upper first lead on the first lead, the second lead includes the lower second lead and the upper second lead on the lower second lead, and the form of the partition area between the upper first lead and the upper second lead is different from the lower part The form of the separation region between the first lead and the lower second lead, and the form of the separation region between the upper first lead and the upper second lead have at least one bend.

Description

technical field [0001] The present invention relates to lighting devices, and more particularly to a lighting device with increased intensity. Background technique [0002] Light-emitting diodes are inorganic semiconductor elements that emit light generated by the recombination of electrons and holes, and are recently used in various fields such as displays, automobile lamps, and general lighting. Light-emitting diodes have long service life, low power consumption, and fast response. Light-emitting devices such as light-emitting diode packages containing light-emitting diodes are expected to replace conventional light sources. [0003] A light-emitting device including a light-emitting diode can be manufactured in various forms depending on the application, and its structure is determined in consideration of light-emitting efficiency, durability, and the like. figure 1 (a) and figure 1 (b) shows an example of a conventional light emitting device including a light emitting ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/62
CPCH01L2224/48091H01L2224/48247H01L33/60H01L33/62H01L2924/00014H01L33/483
Inventor 李泰昌
Owner SEOUL SEMICONDUCTOR