Metal defect detection method and detection structure forming method

Abstract

The invention relates to a metal defect detection method and a detection structure forming method. The metal defect detection structure forming method comprises the steps of providing a sample to be detected, wherein the sample to be detected comprises a metal wire and a conductive structure connected with the metal wire; removing the conductive structure; determining a first metal wire to be detected and a second metal wire to be detected, which are contacted with a metal defect, in the metal wire; and enabling the first metal wire to be detected to be grounded. According to the technical scheme, detection is not directly performed on the original structure of the sample to be detected at which the metal defect is located, the original structure of the sample to be detected is broken to newly establish a new detection structure, and the detection structure can avoid interference brought about by the original structure for detection. On the newly established detection structure, a detection area in which the metal defect is located is gradually reduced by utilizing a voltage contrast image, and the metal defect detection efficiency is improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for detecting metal defects and a method for forming a detection structure. Background technique [0002] With the continuous development of semiconductor integrated circuit device structure, the continuous improvement of process technology and the continuous reduction of device size, more and more defects in semiconductor integrated circuits are invisible. Using traditional defect detection methods to judge its failure mechanism and Finding the physical defect address of a failure is becoming more and more difficult. [0003] For example, in the memory structure, the metal lines used as bit lines are usually larger than 100 microns, while the metal defects generated during the fabrication process are only 100 nanometers, which makes it time-consuming to find the physical location of the metal defects. Using an effective method to locate the physical location of the defect...

AI Technical Summary

Problems solved by technology

[0002] With the continuous development of semiconductor integrated circuit device structure, the continuous improvement of process technology and the continuous reduction of device size, more and more defects in semiconductor integrated circuits are invisible. Using traditional defect detection methods to judge its failure mechanism and It is becoming more and more difficult to locate the physical defect address of the failure

[0003] For example, in the memory structure, the metal lines used as bit lines are usually larger than 100 microns, while the metal defects generated during the fabrication process are only 100 nanometers, which makes it time-consuming to find the physical location of the metal defects

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