Well potential measurement circuit under single particle effect modulation in CMOS process

Abstract

The invention discloses a well potential measurement circuit under single particle effect modulation in a CMOS process. The well potential measurement circuit comprises an acquisition module which collects M well contact potential values, a D trigger module corresponding to N different clock signals CLK, and a PISO output module. The space position precision is controlled through collecting the well potential values of different positions, and the numerical precision of measuring the well potentials is controlled through the difference of the turn thresholds of an NAND gate in the acquisition module. On the basis of multiple first-level time control D trigger sub modules controlled by different clock signals, the time precision of measuring the well potential is set through controlling the clock signal of each sub module, and thus the numerical distribution measurement of the well potential of single particle effect modulation in time and space is realized. The circuit is suitable for the measurement of an N well in a P type substrate under the single particle effect modulation and the measurement of a P well in an N type substrate under the single particle effect modulation.

Description

technical field [0001] The invention relates to measuring the variation of the well potential value in time and space under the modulation of the single event effect, so as to facilitate the detection of whether a logic error occurs in the circuit. Background technique [0002] With the advancement of science and technology, aerospace technology has further become one of the important criteria to measure a country's comprehensive strength. As the core of aerospace devices, the performance and function of integrated circuits are directly related to the advanced level of aerospace devices. In the working environment of spacecraft, the impact of many high-energy particles in space undoubtedly puts forward higher requirements on the performance stability of integrated circuits. [0003] When a charged particle passes through the silicon body, additional electron-hole pairs are created, causing the single-event effect. On the one hand, these excess charges are collected by the ...

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Problems solved by technology

Therefore, this will cause the total charge collected by the MOS tube to be greater than the charge deposited by the particles, resulting in abnormal changes in the logic state of the device or damage to the device

The reduction in feature size leads to an increase in transistor density, so a change in the N-well or P-well potential caused by a particle depositing charge may generate multiple parasitic transistors, which will have a greater impact on the circuit

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