Cell Contact Structure

Abstract

The invention discloses a unit contact structure, comprising a semiconductor substrate with a main surface; an upwardly protruding structure located on the main surface; a unit contact area located on the main surface and adjacent to the main surface an upwardly protruding structure; an interface film conformally covering the sidewall of the upwardly protruding structure and the unit contact area; and a contact plug located on the unit contact area, wherein the An interfacial film is interposed between the contact plug and the cell contact area.

Description

technical field [0001] The present invention relates to a semiconductor device, in particular to a cell contact structure of a dynamic random access memory (DRAM). Background technique [0002] In the field of semiconductors, dynamic random access memory (DRAM) is a capacitive storage device that is integrated in an integrated circuit, stores individual digital data in individual capacitors, and can be read randomly. DRAM is generally composed of many charge storage units arranged in an array, wherein each charge storage unit usually includes a capacitor and a transistor. [0003] In general, each transistor in a DRAM includes a gate, a drain in a semiconductor substrate, and a source separated from the drain. The gate is usually electrically connected to a word line, the source is usually electrically connected to a digit line, and the drain is usually electrically connected to a capacitor through a cell contact structure. [0004] The need for continued scaling of device...

AI Technical Summary

Problems solved by technology

However, as the contact area shrinks, the size of the cell contact structure also shrinks, resulting in higher contact resistance and tighter process window.

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