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Method for reconstructing SRAM memory circuit and memory space

A storage circuit and storage space technology, applied in the direction of information storage, static memory, digital memory information, etc., can solve the problems of poor versatility, unfavorable promotion and application, etc., and achieve the effect of improving the yield rate

Inactive Publication Date: 2017-04-05
国芯科技(北京)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In the prior art, when each integrated circuit processing manufacturer uses each finished SRAM to process integrated circuits, in order to solve the problem of ensuring the yield rate of integrated circuits, they all adopt their own corresponding technical solutions, but each solution is mostly protected as a technical secret and is commonly used. Not strong, not conducive to popularization and application

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  • Method for reconstructing SRAM memory circuit and memory space
  • Method for reconstructing SRAM memory circuit and memory space
  • Method for reconstructing SRAM memory circuit and memory space

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Embodiment Construction

[0012] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0013] figure 1 In a specific embodiment of the present invention, a schematic diagram of a SRAM memory circuit framework is shown. In general, it includes: a reconstruction control unit A1, an address remapping unit A2, and a plurality of SRAM macro units A3; wherein, the reconstruction control unit A1 is used to start the self-test of the SRAM macro unit A3, and obtain the SRAM quality information; the address remapping unit A2 is configured to perform address remapping of the SRAM macro unit A3 according to the quality information.

[0014] In another specific embodiment of the present invention, an SRAM storage circuit, the total capacity of the plurality of SRAM mac...

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Abstract

The invention provides a method for reconstructing a SRAM memory circuit and a memory space. The method comprises a reconstruction control unit, an address remapping unit and a plurality of SRAM macrocells. The reconstruction control unit is used to start the SRAM macrocell self-inspection so that SRAM quality information is acquired. The address remapping unit is used for address remapping of the SRAM macrocells according to the quality information. The method effectively guarantees a yield of an integrated circuit with a high-capacity SRAM memory space in a single chip.

Description

technical field [0001] The invention relates to the technical field of integrated circuit processing optimization, and more specifically, to a SRAM storage circuit and a method for reconfiguring a storage space. Background technique [0002] The yield rate of integrated circuit processing is closely related to the capacity of the on-chip SRAM. For example, a single chip with built-in 128KBSRAM has a high production and processing yield rate, but if the built-in 1MSRAM, the production and processing yield rate will drop significantly. This is because the single chip The larger the capacity of the chip-integrated SRAM, the higher the risk of failure in its production and processing. [0003] The problem of the integrated circuit yield guarantee of the large-capacity SRAM storage space built in a single chip needs to be solved urgently. [0004] In the prior art, when each integrated circuit processing manufacturer uses each finished SRAM to process integrated circuits, in ord...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/413G11C29/18
CPCG11C11/413G11C29/18G11C2029/1806
Inventor 杨旭光
Owner 国芯科技(北京)有限公司