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Double-layered micro-bridge structure and micro-bolometer

A micro-bridge structure and double-layer technology, applied in the field of infrared detection, can solve the problem of low infrared absorption rate, achieve the effect of improving absorption rate and ensuring performance

Active Publication Date: 2017-04-19
WUHAN GAOXIN TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a double-layer micro-bridge structure, which is intended to solve the problem of low infrared absorption rate of the existing single-layer microbolometer

Method used

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  • Double-layered micro-bridge structure and micro-bolometer
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  • Double-layered micro-bridge structure and micro-bolometer

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Embodiment Construction

[0022] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0023] see Figure 1-Figure 3 , the embodiment of the present invention provides a double-layer microbridge structure, including a substrate (not shown in the figure) and a bridge deck layer 1 directly above the substrate, the substrate is a base, and a readout circuit is arranged on it, which can It is electrically connected with peripheral electronic components, and the bridge deck layer 1 is an absorbing layer, which is mainly used to absorb infrared waves ...

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Abstract

The invention relates to infrared detection and provides a double-layered micro-bridge structure comprising a substrate reading out a circuit and a bridge floor layer arranged over the substrate. A bridge leg layer is arranged between the substrate and the bridge floor layer; a resonant cavity is formed between the bridge leg layer and the bridge floor layer; a reflection layer is laid on the surface of one side where the bridge leg layer faces the resonant cavity; the bridge leg layer is supported on the substrate via MEMS devices; and the bridge leg layer is connected with the bridge floor layer via bridge leg columns. The invention further provides a micro-bolometer comprising the above double-layered micro-bridge structure. The bridge leg layer is arranged between the bridge floor layer and the substrate and the resonant cavity is arranged between the bridge leg layer and the bridge floor layer, so the bridge floor layer can directly absorb infrared waves and the infrared waves entering the resonant cavity can be reflected by the reflection layer to the bottom surface of the bridge floor layer and then are absorbed again; and therefore, infrared wave absorption rate of the double-layered micro-bridge structure can be greatly improved and performance of the micro-bolometer can be effectively guaranteed.

Description

technical field [0001] The invention relates to infrared detection, in particular to a double-layer micro-bridge structure and a microbolometer. Background technique [0002] The microbolometer is usually a resistive photosensitive element. When the infrared radiation is incident on the photosensitive element, the temperature of the photosensitive material rises, causing the resistance of the photosensitive material to change, so that the external processing circuit can detect the weak current change caused by the corresponding resistance change. , so as to achieve the purpose of infrared detection. In contrast, infrared imaging systems implemented with uncooled detector technology have smaller size, lower power consumption, and longer duration. It mainly increases the temperature change of thermal insulation and suspension bridge sensitive sensing materials through infrared radiation, and due to the temperature coefficient of resistance of the sensitive material itself, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/00G01J5/20
CPCG01J5/023G01J5/024G01J5/20B81B7/00B81B2201/0207
Inventor 蔡光艳黄立马占峰高健飞
Owner WUHAN GAOXIN TECH