Process method for double-patterned hard mask with organic anti-reflection layer containing inorganic substances

A double-pattern and anti-reflection layer technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of increasing production costs and achieve low cost, easy process, good shape retention and etch resistance sexual effect

Active Publication Date: 2019-11-22
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, the above-mentioned complex film layers and the intervention of more equipment greatly increase the production cost

Method used

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  • Process method for double-patterned hard mask with organic anti-reflection layer containing inorganic substances
  • Process method for double-patterned hard mask with organic anti-reflection layer containing inorganic substances
  • Process method for double-patterned hard mask with organic anti-reflection layer containing inorganic substances

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Embodiment Construction

[0035] Attached below figure 1 Specific embodiments of the present invention will be described in detail. It should be understood that the invention can have various changes in different examples without departing from the scope of the invention, and that the descriptions and illustrations therein are illustrative in nature rather than limiting the invention.

[0036] It should be noted that the idea of ​​this patent is to reduce the use of metal hard masks, and use a substance containing inorganic substances, such as silicon, to be included in the organic spin-coated anti-reflection layer as a pattern transfer layer; to make the photolithography process module more It can effectively undertake the functions of graphics generation and transmission, which can not only reduce the load of other equipment, but also meet the process requirements.

[0037] In the following specific embodiments of the present invention, please refer to figure 1 , figure 1 It is a schematic flowcha...

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Abstract

The invention provides a process for preparing double-pattern hard mask with an organic anti-reflection layer containing an inorganic substance. The process comprises a step of providing a semiconductor substrate with the deposition of double-pattern second hard mask layer, a step of covering the double-pattern second hard mask layer with a layer of silicon-containing organic hard mask layer to be a double-pattern first hard mask layer, a step of covering the double-pattern first hard mask layer with a layer of a carbon-containing organic planarization layer, a step of covering the organic planarization layer with an anti-reflection layer, a step of covering the anti-reflection layer to form a photoresist layer, and a step of using an etching agent without nitrogen to carry out the etching process of double patterns. Through using a silicon-containing organic spin-coated silicon substance as the anti-reflection layer of a photoresist bottom and etching a transfer layer, the simple process and the reduction of cost are achieved, and the purpose of precisely controlling a process flow is achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a double-patterning process method, and more specifically, to a process method in which an organic anti-reflection layer containing inorganic substances is used as a double-pattern hard mask. Background technique [0002] In the manufacturing process of integrated circuits, multiple processes such as material preparation, masking, photolithography, cleaning, etching, doping, and chemical mechanical polishing have gone through. Among them, the photolithography process is the most critical and determines the advanced level of the manufacturing process. As the "leader" of the integrated circuit industry, lithography technology has provided the most powerful technical support for the development of the entire industry in the course of half a century of evolution. The level of semiconductor lithography technology determines the number of transist...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/77
CPCH01L21/77
Inventor 姚树歆周炜捷
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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