Unlock instant, AI-driven research and patent intelligence for your innovation.

Structure design of avoiding pixel electrode open and preparation technology thereof

A technology of structural design and preparation process, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as electrical defects, hole fractures, P-ITO fractures, etc., to avoid defects, not easy to fracture, and improve production yield. Effect

Inactive Publication Date: 2017-04-26
BEIJING INSTITUTE OF TECHNOLOGYGY
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, in semiconductor processing, especially in the thin film transistor (Thin Film Transistor, TFT) array of the driving device of the flat panel display, since the thickness of the PLN layer is much higher than that of other thin film layers, when the PLN layer is drilled, the depth of the hole is too large. The slope is too steep, which seriously affects the deposition of the pixel electrode line P-ITO, and it is easy to cause it to break at the hole
like figure 1 Shown is the cross-sectional view of the TFT formed by the existing process. The thickness of the P-ITO layer is only 40nm. If the PLN hole is too deep, it is easy to break at the corner due to the steep slope, resulting in defective
The slope angle during P-ITO deposition can be reduced to a certain extent by the PVX hole and the PLN hole being misplaced. However, the defect caused by P-ITO fracture still occurs. This problem has not been fundamentally solved, and it is serious. Affected product yield
The schematic diagram of the key position section of the traditional TFT structure in the prior art is as follows: figure 1 As shown, in this structure, the positions of the PLN hole and the drain electrode hole coincide, and the formed hole has a larger depth and a larger slope angle. Electrical failure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Structure design of avoiding pixel electrode open and preparation technology thereof
  • Structure design of avoiding pixel electrode open and preparation technology thereof
  • Structure design of avoiding pixel electrode open and preparation technology thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] In the process of array substrate preparation, the actual situation can be formed as follows figure 2 In the structure shown, a thickened LS light-shielding layer 3 needs to be formed, and a gate-controlled active channel and a polysilicon layer in contact with the drain need to be formed on the LS light-shielding layer 3, and the active layer 2 is formed outside the LS light-shielding range. In the remaining area, the drain electrode 9 pattern is located directly above the LS light-shielding layer 3. After the PLN layer 10 is coated, the PLN drilling is completed directly above the drain. The deposition of the pixel electrode line P-ITO13 at the etching hole is completed.

[0041] It can be seen that due to the existence of the LS light-shielding layer 3 with a large thickness, the position of the drain electrode 9 is higher than that of other surrounding areas. The thickness of the PLN layer 10 directly above the pole electrode 9 is smaller than other positions. In...

Embodiment 2

[0045]In Example 1, although due to the existence of the thick LS light-shielding layer 3, the thickness of the PLN layer 10 above the raised drain is reduced, and the depth of the hole is reduced, which is beneficial to the deposition of P-ITO13, but the problem that arises is that the LS The slope angle at the boundary of the light-shielding layer 3 increases, and the active layer 2 may break at this position. Therefore, on this basis, in the second embodiment, the length of the LS light-shielding layer 3 is further increased to cover the entire active channel, so as to ensure that the active layer 2 will not break and at the same time ensure that the depth of the PLN hole is still obtained. Reduced, which is beneficial to the deposition of P-ITO13 and avoids defects caused by the fracture of P-ITO13. Its structure is as follows image 3 shown.

Embodiment 3

[0047] In Example 2, the problem of too large slope angle of the active layer at the boundary of the LS light-shielding layer 3 is solved, but because the length of the LS light-shielding layer 3 increases, the light-shielding area expands, which will reduce the aperture ratio to a certain extent. In order to avoid this from happening and at the same time ensure that the slope angle of the active layer 2 is appropriately reduced, in this embodiment, a method of performing secondary etching on the LS light-shielding layer 3 to form a step-shaped LS light-shielding layer 3 is adopted, and its cross-sectional structure is as follows Figure 4 shown. The LS light-shielding layer 3 in Example 1 is formed by the first etching, and the second-order LS light-shielding layer 3 is formed by performing secondary etching on the pattern part, which can not only ensure the complete connection of the active layer 2, but on this basis, Transmittance is also guaranteed.

[0048] The existence...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a structure design of avoiding pixel electrode open. The structure design employs a special LS light shield layer, a drain etching hole is arranged at the pattern edge position of the LS layer to form a protruding structure at the drain position, and the thickness of the PLN layer at the protruding position is obviously smaller than other positions around. Further, the PLN punching is completed above the protruding position of the drain, the depth of the punching is obviously smaller than the depth of the hole of the original structure so as to provide smaller angle of gradient for the deposition of the pixel electrode line P-ITO and avoid the badness caused by the P-ITO thread breakage.

Description

technical field [0001] The invention belongs to the field of semiconductor substrates, and in particular relates to a structure design and preparation process for avoiding pixel electrode opening. Background technique [0002] At present, in semiconductor processing, especially in the thin film transistor (Thin Film Transistor, TFT) array of the driving device of the flat panel display, since the thickness of the PLN layer is much higher than that of other thin film layers, when the PLN layer is drilled, the depth of the hole is too large. Large, the slope is too steep, which seriously affects the deposition of the pixel electrode line P-ITO, and it is easy to cause it to break at the hole. Such as figure 1 Shown is the cross-sectional view of the TFT formed by the existing process. The thickness of the P-ITO layer is only 40nm. If the PLN hole is too deep, it is easy to break at the corner due to the steep slope and cause defects. The slope angle during P-ITO deposition c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/12H01L21/77
CPCH01L27/1244H01L27/1259
Inventor 喻志农闫伟郭建蒋玉蓉薛唯
Owner BEIJING INSTITUTE OF TECHNOLOGYGY