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62results about How to "Reduce electrostatic discharge" patented technology

Array substrate, manufacturing method of routing line and test pad of array substrate as well as liquid crystal panel

The invention provides an array substrate. The array substrate comprises a test pad located in a test pad area and a routing line located in a routing area, wherein the routing line is connected with the test pad; the routing line comprises a first metal layer, a first insulation layer, a first passivation layer, a second insulation layer, a second passivation layer and a transparent electrode layer which are successively arranged on the substrate and are located in the routing area. The invention also provides a manufacturing method of the routing line and the test pad of the array substrate as well as a liquid crystal panel. In a routing structure of the array substrate, a second metal layer which is a source-drain metal layer of a thin film transistor is eliminated; a pixel electrode layer is in span connection with the first metal layer; a plurality of film layers are arranged between the pixel electrode layer and the first metal layer, and a long distance is formed between the pixel electrode layer and the first metal layer, thus the breakdown threshold voltage can be increased, and the stray capacitance can be reduced, so that the occurrence probability of electrostatic discharge can be reduced.
Owner:SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD

CMOS image sensor with multiple stage transfer gate

An image sensor pixel comprises a first charge storage node configured to have a first charge storage electric potential; a second charge storage node configured to have a second charge storage electric potential and receive charge from the first charge storage node, wherein the second charge storage electric potential is greater than the first charge storage electric potential; and a transfer circuit coupled between the first and the second charge storage nodes, wherein the transfer circuit comprises at least three transfer regions, wherein: a first transfer region is proximate to the first charge storage node and configured to have a first transfer electric potential greater than the first charge storage electric potential and lower than the second charge storage electric potential; a second transfer region is coupled between the first and a third transfer region and configured to have a second transfer electric potential greater than the first charge storage electric potential and lower than the second charge storage electric potential; and the third transfer region is proximate to the third charge storage node and configured to have a third transfer electric potential greater than the first charge storage electric potential and lower than the second charge storage electric potential. Charges are fully transferred from the first charge storage node to the second charge storage node after a plurality of transfer signal pulses.
Owner:OMNIVISION TECH INC
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