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A configuration method for phosphorus-silicate glass tank in wet etching process

A technology of wet etching and configuration method, applied in sustainable manufacturing/processing, climate sustainability, semiconductor devices, etc., can solve problems such as the inability to effectively remove metal impurities on the surface of silicon wafers, and the conversion efficiency of battery cells will not be improved. , to achieve the effect of improving the effect and improving the conversion efficiency

Active Publication Date: 2019-05-31
DONGFANG HUANSHENG PHOTOVOLTAIC (JIANGSU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The mixed solution of HF and deionized water used in the dephosphorous silicon glass tank in the conventional wet etching process, the concentration of HF is about 8-12%, and the function is only to remove the phosphorous silicon glass and neutralized silicon on the front of the cell after diffusion. Hydroxide ions remaining on the surface of the silicon wafer in the alkali bath and metal impurities on the surface of the silicon wafer cannot be effectively removed, so the conversion efficiency of the battery sheet will not be improved

Method used

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  • A configuration method for phosphorus-silicate glass tank in wet etching process

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Embodiment 1

[0025] Embodiment 1: A method for configuring a phosphorus-silicate glass tank in a wet etching process, the steps are:

[0026] (1) Add deionized water into the phosphorus-silicate glass tank, add hydrofluoric acid and hydrochloric acid, the molar concentration of hydrofluoric acid is 15%, and the molar concentration of hydrochloric acid is 2%, start the circulation, and mix for 10 minutes;

[0027] (2) Pass ozone into the circulation pipe, the ozone flow rate is 40L / min, and last for more than 10 minutes before the reaction, keep the flow rate at 20L / min during the reaction process, and keep the temperature at 25°C;

[0028] (3) Put the diffused silicon wafer into the wet etching machine, and keep it in the phosphorus-silicate glass tank for 0.5 min during the process.

[0029] In this embodiment, the cleaning effect of the silicon wafer in the wet etching process is strengthened by peeling off after oxidation, the hydrogen passivation effect on the emitter surface and the a...

Embodiment 2

[0030] Embodiment 2: a method for configuring a phosphorus-silicate glass tank in a wet etching process, the steps are:

[0031] (1) Add deionized water into the phosphorus-silicate glass tank, add hydrofluoric acid and hydrochloric acid, the molar concentration of hydrofluoric acid is 20%, and the molar concentration of hydrochloric acid is 5%, start the circulation, and mix for 10 minutes;

[0032] (2) Pass ozone into the circulation pipe, the ozone flow rate is 60L / min, last for more than 10 minutes before the reaction, keep the flow rate at 30L / min during the reaction process, and keep the temperature at 35°C;

[0033] (3) Put the diffused silicon wafer into the wet etching machine, and keep it in the phosphorus-silicate glass tank for 2 minutes during the process.

[0034] In this embodiment, the cleaning effect of the silicon wafer in the wet etching process is strengthened by peeling off after oxidation, the hydrogen passivation effect on the emitter surface and the alu...

Embodiment 3

[0035] Embodiment 3: A method for configuring a phosphorus-silicate glass tank in a wet etching process, the steps are:

[0036] (1) Add deionized water into the phosphorus-silicate glass tank, add hydrofluoric acid and hydrochloric acid, the molar concentration of hydrofluoric acid is 18%, and the molar concentration of hydrochloric acid is 4%, start the circulation, and mix for 10 minutes;

[0037] (2) Pass ozone into the circulation pipe, the ozone flow rate is 50L / min, and last for 10 minutes before the reaction, keep the flow rate at 25L / min during the reaction process, and keep the temperature at 30°C;

[0038] (3) Put the diffused silicon wafer into the wet etching machine, and keep it in the phosphorus-silicate glass tank for 1.5 minutes during the process.

[0039] In this embodiment, the cleaning effect of the silicon wafer in the wet etching process is strengthened by peeling off after oxidation, the hydrogen passivation effect on the emitter surface and the aluminu...

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Abstract

The invention discloses an allocation method of a phosphorosilicate glass removing groove in a wet etching process. The allocation method is characterized by comprising the steps of adding deionized water and a mixed liquid of a hydrofluoric acid and a hydrochloric acid to the phosphorosilicate glass removing groove, wherein the molar concentration of the hydrofluoric acid is 15%-20%, and simultaneously introducing ozone. According to the allocation method, a certain ratio of hydrochloric acid is added to the phosphorosilicate glass removing groove and the concentration of HF is increased, and meanwhile, a certain flow of ozone is introduced, can play a role in removing phosphorosilicate glass and residual alkali in a traditional method and is capable of effectively removing metal impurities on the surface of a silicon wafer (the silicon wafer is oxidized by the ozone to generate SiO2 and the SiO2 is removed through the HF), so that a hydrogen passivation effect on the front surface of a battery piece and an aluminum back field passivation effect on the back surface can be effectively improved, thereby improving the conversion efficiency of the battery piece.

Description

technical field [0001] This patent belongs to the field of photovoltaic technology, and specifically relates to the wet etching process in the solar cell manufacturing process. Background technique [0002] Due to the limited reserves of petrochemical energy in the world, and the use of petrochemical energy will cause serious environmental pollution, governments of various countries have generally noticed the key position of various new clean and renewable energy sources in the future energy structure, and have increased the use of these energy sources. Industry and related research work support, in order to occupy a place in the future new energy field. Among various new clean energy sources, solar energy is considered to be one of the most promising clean energy sources. [0003] Crystalline silicon solar cells are devices that convert light energy into electrical energy, and photoelectric conversion efficiency is one of the important indicators to measure the quality of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311H01L31/18
CPCH01L21/31111H01L31/1804Y02P70/50
Inventor 吴俊清徐强钱明明樊华蒋志强徐建
Owner DONGFANG HUANSHENG PHOTOVOLTAIC (JIANGSU) CO LTD