Strip structure-based electric control terahertz wave switch

A strip and electronic control technology, applied in the field of terahertz wave switches, can solve the problems of high processing technology and processing environment requirements, complex structure, high cost, and achieve the effect of simple design principle, simple and compact structure, and small size

Inactive Publication Date: 2017-05-10
CHINA JILIANG UNIV
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The currently researched and proposed terahertz wave switch structures at home and abroad are mainly based on structures such as photonic crystals and metamaterials. also high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Strip structure-based electric control terahertz wave switch
  • Strip structure-based electric control terahertz wave switch
  • Strip structure-based electric control terahertz wave switch

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Such as Figure 1~2 As shown, the electronically controlled terahertz wave switch based on the strip structure includes a base layer 1, a silicon dioxide layer 2, a molybdenum disulfide film 3, a first strip region 4, a left rectangular strip 5, a second strip region 6, Right rectangular strip 7, the third strip area 8; the upper layer of the base layer 1 is a silicon dioxide layer 2, and the upper layer of the silicon dioxide layer 2 is covered with a molybdenum disulfide film 3, and the molybdenum disulfide film 3 is provided with a first Stripe area 4, left rectangle strip 5, second strip area 6, right rectangle strip 7, third strip area 8, first strip area 4, left rectangle strip 5, second strip area 6 , the right rectangular strip 7, and the third strip region 8 are arranged in sequence from left to right, and the terahertz signal is vertically incident from directly above the second strip region 6, passing through the molybdenum disulfide film 3, the silicon dioxi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a strip structure-based electric control terahertz wave switch, which comprises a substrate layer, a silicon dioxide layer, a molybdenum disulfide film, a first strip region, a left rectangular strip, a second strip region, a right rectangular strip and a third strip region, wherein the molybdenum disulfide film is provided with the first strip region, the left rectangular strip, the second strip region, the right rectangular strip and the third strip region; the first strip region, the left rectangular strip, the second strip region, the right rectangular strip and the third strip region are sequentially arranged on the molybdenum disulfide film from left to right; a terahertz signal vertically enters from the upper part of the second strip region and sequentially passes through the molybdenum disulfide film, the silicon dioxide layer and the substrate layer for vertical output. On/off of the terahertz signal is achieved through adjusting offset DC voltage applied between the molybdenum disulfide film and the substrate layer and adjusting an effective dielectric constant of the molybdenum disulfide film. The strip structure-based electric control terahertz wave switch has the advantages of being simple and compact in structure, small in size, fast in response and simple in design principle.

Description

technical field [0001] The invention relates to a terahertz wave switch, in particular to an electronically controlled terahertz wave switch based on a strip structure. Background technique [0002] In recent years, terahertz technology, which is in the transitional region from macroscopic electronics to microscopic electronics, is a new technology developed in the late 1980s. The unique frequency range of terahertz waves (located between the microwave frequency band and the optical frequency band) covers the molecular vibration and rotation spectra of most macromolecular substances, so most macromolecular substances in the terahertz frequency band regardless of their absorption, reflection or emission spectra have Obvious fingerprint characteristics, which is not available in microwave. The rapid progress of terahertz wave radiation sources and detection methods has promoted the quiet rise of related device functions. Therefore, the research on terahertz technology and te...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/10
CPCH01P1/10
Inventor 章乐李九生
Owner CHINA JILIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap