Word line driver, semiconductor memory apparatus and test method using the same

Abstract

A semiconductor memory apparatus may precharge a plurality of word lines to first and / or second low voltages. The semiconductor memory apparatus may precharge an odd word line and an even word line to different levels, and accelerate passing GIDL occurring from a memory cell toward a word line to memory cells susceptible to GIDL.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2015-0155926 filed with the Korean Intellectual Property Office on November 6, 2015, the entire contents of which are incorporated herein by reference. technical field [0003] Various embodiments of the present invention relate generally to semiconductor technology and more particularly to word line drivers for semiconductor devices. Background technique [0004] A semiconductor memory device such as a dynamic random access memory (DRAM) includes a plurality of memory cells for storing data. Each memory cell has a metal oxide semiconductor (MOS) transistor and capacitor and is coupled to a word line and a bit line. As the level of integration increases, MOS transistors become more difficult to operate safely and stably. In addition, since gate line widths have become smaller due to improved manufacturing methods, the sizes of transistors used in ...

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Problems solved by technology

In particular, it is now often difficult to protect the information storage time of memory cells due to gate-induced-drain leakage (GIDL) that occurs in the region between the drain region and the source near the gate electrode.

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