Preparation method of substrate with carrier capture center
A carrier and substrate technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as lattice damage, reduce electrical properties of electronic components, and complex processes, and achieve the effect of improving crystal quality.
Active Publication Date: 2017-05-17
SHANGHAI SIMGUI TECH
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Problems solved by technology
However, in practice, in order to introduce the carrier trapping center, it is necessary to introduce additional modifying ions by implantation and other means, and the process is very complicated.
The complex preparation process causes lattice damage to the device layer, which reduces the electrical performance of the electronic components in the device layer
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[0014] The specific implementation of the method for preparing a substrate with carrier trapping centers provided by the present invention will be described in detail below in conjunction with the accompanying drawings.
[0015] attached figure 1 Shown is the flow chart of the method described in this specific embodiment, including: step S10, providing a semiconductor substrate, the surface of the semiconductor substrate has an insulating layer; step S11, implanting bubbling ions into the semiconductor substrate, for Forming a peeling layer; Step S12, implanting modified ions into the insulating layer to form nanoclusters; Step S13, providing a supporting substrate; Step S14, using the insulating layer as an intermediate layer, placing the supporting substrate Bonding with the semiconductor substrate; step S15, performing the first heat treatment on the substrate after bonding, so that a peeling layer is formed at the position where the bubbling ions are injected, and the semi...
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Abstract
The invention provides a preparation method of a substrate with a carrier capture center; the preparation method comprises the steps of injecting foam ions into a semiconductor substrate to form a stripping layer, and injecting modified ions into an insulating layer to form nano clusters; providing a support substrate; using the insulating layer as a middle layer, and bonding the support substrate to the semiconductor substrate; subjecting the bonded substrate to primary thermal treatment to form a stripping layer at a position where the foam ions are injected, and stripping the semiconductor substrate from the stripping layer; thinning the stripping surface of the stripped semiconductor substrate; subjecting the thinned semiconductor substrate to secondary thermal treatment so as to reinforce a bonding surface and form nano clusters at a position where the modified ions are injected.
Description
technical field [0001] The invention relates to the field of semiconductor materials, in particular to a method for preparing a substrate with a carrier trapping center. Background technique [0002] A typical substrate structure with an insulating buried layer in the prior art includes three layers, successively a support layer, an insulating layer on the surface of the support layer, and a device layer on the surface of the insulating layer. In some applications, in order to prevent carriers from being excited by high-energy rays and migrate to the outside of the substrate, it is necessary to introduce a layer of carrier trapping centers in the substrate to trap these carriers, thereby improving the electrical properties of electronic components in the device layer. performance. However, in practice, in order to introduce the carrier trapping center, it is necessary to introduce additional modifying ions by implantation and other means, and the process is very complicated...
Claims
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IPC IPC(8): H01L21/02H01L21/20H01L21/265H01L29/06
CPCH01L21/02008H01L21/2003H01L21/2007H01L21/265H01L29/06H01L21/76254H01L21/26533H01L21/324H01L29/0603
Inventor 魏星常永伟陈猛陈国兴费璐王曦
Owner SHANGHAI SIMGUI TECH