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Growth equipment of sapphire crystal

A sapphire crystal and equipment technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of poor effect and unsatisfactory preparation of high-quality sapphire crystals, and reduce thermal stress, prevent crystal melting back, and automate high degree of effect

Active Publication Date: 2017-05-24
TDG YINXIA NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the growth furnaces in the prior art have extremely poor effects on the control of the temperature field, especially the control of the radial temperature gradient, and are far from meeting the requirements for preparing high-quality sapphire crystals.

Method used

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  • Growth equipment of sapphire crystal
  • Growth equipment of sapphire crystal
  • Growth equipment of sapphire crystal

Examples

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Embodiment Construction

[0025] Various embodiments of the invention will be described in more detail below with reference to the accompanying drawings. In the various drawings, the same elements are denoted by the same or similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale.

[0026] Such as Figure 1-2 As shown, the sapphire crystal growth furnace in the present invention is used to prepare sapphire crystals, and includes a furnace body 1 , a furnace cover 2 , a crucible 3 , and a temperature field regulating device 4 . The furnace body 1 is used to provide a growth environment for sapphire crystals. The furnace cover 2 is covered on the furnace body 1 to seal the furnace body 1 . The crucible 3 is arranged in the furnace body 1 and is used to hold the melt and serve as a reaction vessel. In this embodiment, the melt is Al2O3, specifically, it may be block or powder, or a combination of the two.

[0027] The temperature field adjusting ...

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Abstract

The invention discloses growth equipment of a sapphire crystal. The growth equipment comprises a furnace body, a furnace cover, a crucible, a first adjusting plate, a second adjusting plate, a first push-pull rod and a second push-pull rod, wherein the furnace body is used for providing a growth environment of the sapphire crystal; the furnace body is covered with the furnace cover; the crucible is arranged in the furnace body, and is used for accommodating the furnace body and serving as a reaction container; the first adjusting plate and the second adjusting plate which are mutually symmetrical structures as well as a first push-pull rod and a second push-pull rod which are mutually symmetrical structures are arranged in the furnace body and are positioned above the crucible; the first adjusting plate and the second adjusting plate are arranged oppositely and are articulated with each other; the first end of the first push-pull rod is articulated with the first adjusting plate, the first end of the second push-pull rod is connected with the first end of the second adjusting plate, the respective second ends of the first push-pull rod and the second push-pull rod are articulated, the articulated shaft of the first push-pull rod and the second push-pull rod is connected with a drive shaft which passes through the furnace cover and penetrates into the furnace body, and the deflection angles of the first adjusting plate and the second adjusting plate are adjusted, so that the temperature gradient adjustment for a solid-liquid melting interface inside the crucible is realized. The equipment can realize refinement for temperature filed control.

Description

technical field [0001] The present invention relates to the technical field of sapphire crystal cultivation equipment, and more specifically, to a sapphire crystal growth equipment. Background technique [0002] Sapphire is a corundum mineral with a trigonal crystal system. Generally, all kinds of gem-grade corundum other than ruby ​​are called sapphire. Sapphire is widely used in industrial manufacturing due to its excellent mechanical properties and optical transmittance. [0003] The Kyropoulos sapphire crystal growth furnace is an equipment for preparing sapphire, and the temperature field in the growth furnace needs to be strictly controlled during the crystal growth process. However, the growth furnaces in the prior art have extremely poor effects on the control of the temperature field, especially the control of the radial temperature gradient, and are far from meeting the requirements for preparing high-quality sapphire crystals. Contents of the invention [000...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/20C30B17/00
Inventor 康森滕斌王国强张吉倪浩然陈浩程佳宝
Owner TDG YINXIA NEW MATERIAL CO LTD
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