A method for preparing aln whiskers on the surface of al4o4c matrix

Abstract

The invention discloses a method for preparing an AlN whisker on the surface of an Al4O4C matrix. According to the technical scheme of the method, the Al4O4C matrix is loaded in a crucible; afterwards, the crucible is put in a tubular corundum furnace; the heat preservation is carried out for 0 to 600min in conditions of a nitrogen atmosphere and 1,000 to 1,800 DEG C; the Al4O4C matrix is cooled to a room temperature, so that the AlN whisker is obtained on the surface of the Al4O4C matrix. The Al4O4C matrix is one of Al4O4C powder, an Al4O4C green body and an Al4O4C sintered body, wherein the Al4O4C powder has an Al4O4C content which is not less than 98.0wt% and the granularity which is less than 150 microns. The Al4O4C green body is obtained by carrying out compression molding on the Al4O4C powder in a condition of 5MPa to 50MPa; the Al4O4C sintered body is obtained by raising the temperature of the Al4O4C green body to 1,400 to 1,800 DEG C in a condition of argon or a vacuum or heat pressing, carrying out the heat preservation for 0 to 300min, and cooling to the room temperature. According to the method, the addition of a catalyst is not needed; the process is simple; the prepared AlN whisker is controllable in size and high in yield.

Description

technical field [0001] The invention belongs to the field of AlN whiskers. Specifically related to a 4 o 4 Method for preparing AlN whiskers on the surface of C substrate. Background technique [0002] AlN material has physical and chemical properties such as high thermal conductivity, excellent electrical insulation, low dielectric constant, low thermal expansion coefficient, high strength and hardness, excellent corrosion resistance and excellent wear resistance, and is ideal for making high-power semiconductor module circuits, Ideal materials for large-scale integrated circuit ceramic substrates and microwave energy transmission windows. Among them, AlN whiskers are the reinforcement of new composite materials or functional composite whisker materials due to their advantages of high aspect ratio, complete structure, few defects, high strength and high modulus, and will have broad application prospects. [0003] Currently, AlN whiskers can be prepared in various ways. ...

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Problems solved by technology

Chemical Vapor Deposition (CVD): For example, MehriMashhadi et al. prepare AlN whiskers with metal Al powder as raw material (MehriMashhadi, FarhadMearaji, MortezaTamizifar, The effects of NH 4 Cl addition and particle size of Al powder in AlNwhiskers synthesis by direct nitridation[J].Int.Journal of Refractory Metals and Hard Materials, 2014 46:181-187), chemical vapor deposition raw material processing process is complex, synthesis rate is low

Carbothermal Reductive Nitriding (CRN): For example, Woo-Sik Jung et al. used Carbothermal Reductive Nitriding (CRN) to prepare AlN whiskers (Woo-Sik Jung, HyeongUkJoo, Catalytic growth of aluminum nitride whiskers by a modified carbothermal reduction and nitridation method[J].Journal of Crystal Growth,2005 285:566–571), the carbothermal reduction nitriding method requires a catalyst to be catalyzed, whiskers usually gather and grow near the catalyst, and the dispersion is poor

Self-propagating high-temperature synthesis method: For example, Liang Baoyan and others used B-doped assisted self-propagating high-temperature synthesis of AlN whiskers (Liang Baoyan, Guo Meng, Han Jingxian, Wang Zhiwei, Wang Le. Research on B-doped assisted self-propagating high-temperature synthesis of AlN whiskers[J ].Journal of Zhongyuan Institute of Technology, 2014.25[1]:55–58), the reaction process of self-propagating high-temperature synthesis method is difficult to control, and the whisker size is uncontrollable

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