Upper electrode component and semiconductor processing equipment

Abstract

The invention provides an upper electrode component and semiconductor processing equipment. A medium bucket arranged on a cavity cover plate, a coil surrounding the medium bucket, a heating mechanism used for heating the medium bucket, an upper heating zone and a lower heating zone are included. The upper heating zone and the lower heating zone sleeve a top and a bottom of an outer circumferential wall of the medium bucket and are located above and below the coil respectively. By using the upper electrode component, temperature control accuracy and temperature uniformity of the medium bucket can be increased and heat transfer efficiency can also be increased so that technology quality can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an upper electrode assembly and semiconductor processing equipment. Background technique [0002] Currently, plasma processing equipment is more and more widely used in the manufacturing processes of integrated circuits (ICs), power devices, MEMS devices, and the like. One of the notable applications is the Inductive Coupled Plasma (ICP) device, which excites the reactive gas to generate plasma by the electromagnetic field generated by the current passing through the radio frequency coil. As the demand for high etching rate continues to increase, the density of the plasma is also required to increase. Therefore, it is inevitable to use a three-dimensional coil to surround the outside of the ceramic barrel. During the process, temperature is an important parameter to ensure high-quality process results and the stability of the reaction chamber. The accuracy of temperatu...

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Problems solved by technology

[0005] One, because the heating mechanism 7 indirectly heats the ceramic barrel 2 by heating the upper cover plate 5, and the thermal conductivity of the sealing ring 4 arranged between the upper cover plate 5 and the ceramic barrel 2 is very poor, so by controlling the upper cover plate 5 The temperature of the ceramic barrel 2 is controlled indirectly, this temperature control method is very inaccurate

[0006] Second, since the heating mechanism 7 is arranged on the upper cover plate 5, the heat generated by the heating mechanism 7 needs to be gradually transferred to the bottom of the ceramic barrel 2 from top to bottom, which not only has low heat transfer efficiency, but also causes the ceramic barrel to 2 The temperature distribution in its axial direction is not uniform

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