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Blue light LED epitaxial structure grown on GaAs substrate

An epitaxial structure and substrate technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of small cost reduction, low P-type doping concentration, and difficult manufacturing process, so as to reduce the degree of lattice matching, High P-type doping concentration, the effect of improving recombination efficiency

Inactive Publication Date: 2017-05-24
NANTONG TONGFANG SEMICON +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But it's expensive in itself, so the cost reduction isn't that big
At the same time, the manufacturing process is more difficult in terms of vertical structure, and the P-type doping concentration is relatively low

Method used

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  • Blue light LED epitaxial structure grown on GaAs substrate
  • Blue light LED epitaxial structure grown on GaAs substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] (1) First, the epitaxial structure is prepared by baking at a high temperature in an MOCVD reactor to remove residual impurities on the surface of the GaAs substrate 1 .

[0021] (2) Adjust the temperature to 500° C. on the GaAs substrate 1 to grow a ZnO buffer layer 21 with a growth thickness of 5 nm.

[0022] (3) An AlN buffer layer 22 is grown on the ZnO buffer layer 21 at a temperature of 500° and a growth thickness of 5 nm.

[0023] (4) A U1-type GaN layer 31 is grown on the AlN buffer layer 22 , and the temperature is adjusted to 900° C. to grow the U1-type GaN layer 31 for about 10 minutes with a thickness of 1 μm.

[0024] (5) A superlattice GaN / AlGaN Bragg reflection layer 33 is grown on the U1-type GaN layer 31 with a period number of 3, wherein the thickness of GaN is 1 nm, the thickness of AlGaN is 1 nm, the growth temperature is 900 degrees, and the Al composition of AlGaN is 0.6.

[0025] (6) A U2-type GaN layer 32 is grown on the superlattice GaN / AlGaN ...

Embodiment 2

[0027] (1) First, the epitaxial structure is prepared by baking at a high temperature in an MOCVD reactor to remove residual impurities on the surface of the GaAs substrate 1 .

[0028] (2) Adjust the temperature to 600° C. on the GaAs substrate 1 to grow a layer of ZnO buffer layer 21 with a growth thickness of 10 nm.

[0029] (3) An AlN buffer layer 22 is grown on the ZnO buffer layer 21 at a temperature of 600° and a growth thickness of 10 nm.

[0030] (4) A U1-type GaN layer 31 is grown on the AlN buffer layer 22 , and the temperature is adjusted to 1000° C. to grow the U1-type GaN layer 31 for about 20 minutes with a thickness of 2 μm.

[0031] (5) Superlattice GaN / AlGaN Bragg reflection layer 33 is grown on the U1-type GaN layer 31 with a period number of 3, in which the thickness of GaN is 2nm, the thickness of AlGaN is 2nm, the growth temperature is 1000 degrees, and the Al composition of AlGaN is 0.4.

[0032] (6) A U2-type GaN layer 32 is grown on the superlattice ...

Embodiment 3

[0034] (1) First, the epitaxial structure is prepared by baking at a high temperature in an MOCVD reactor to remove residual impurities on the surface of the GaAs substrate 1 .

[0035] (2) Adjust the temperature to 600° C. on the GaAs substrate 1 to grow a ZnO buffer layer 21 with a growth thickness of 15 nm.

[0036] (3) An AlN buffer layer 22 is grown on the ZnO buffer layer 21 at a temperature of 700° and a growth thickness of 15 nm.

[0037] (4) A U1-type GaN layer 31 is grown on the AlN buffer layer 22 , and the temperature is adjusted to 1100° C. to grow the U1-type GaN layer 31 for about 30 minutes with a thickness of 3 μm.

[0038] (5) Superlattice GaN / AlGaN Bragg reflective layer 33 is grown on U1-type GaN layer 31 with a cycle number of 5, in which the thickness of GaN is 2nm, the thickness of AlGaN is 2nm, the growth temperature is 1100 degrees, and the Al composition of AlGaN is 0.3.

[0039] (6) A U2-type GaN layer 32 is grown on the superlattice GaN / AlGaN Brag...

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Abstract

The invention relates to a blue light LED epitaxial structure grown on a GaAs substrate, relating to the technical field of light-emitting diodes. The structure of the blue light LED epitaxial structure comprises a substrate, a buffer layer, a U type GaN layer, an N type GaN layer, an active region, an electronic barrier layer and a P type GaN layer from the bottom to top. The structure is characterized in that the substrate is a GaAs substrate, the buffer layer comprises a ZnO buffer layer and a metal nitride buffer layer growth on the ZnO buffer layer, and the U type GaN layer comprises a U1 type GaN layer, a Prague reflection layer, and a U2 type GaN layer from the bottom to top. Compared with the prior art, the blue light LED epitaxial structure has the advantages that the GaAs substrate is employed, the quality is high, the dissociation is easy, the cost is relatively low, a vertical structure is easily made, the P type doping is easy, and the light emitting efficiency can be improved.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a blue-light LED epitaxial structure grown on a GaAs substrate and a growth method. Background technique [0002] With the increasing application of blue GaN-based LEDs, people pay more attention to the brightness of blue GaN-based LEDs. In recent years, LED researchers have developed blue LEDs by adjusting the specifications of sapphire patterned substrates, Si substrates, SiC, and ZnO. The purpose is to reduce costs and improve the quality of epitaxial crystals, thereby promoting the rapid development of blue LEDs. [0003] Most of the blue LEDs in the prior art are grown on sapphire substrates, SiC substrates and newly developed Si substrates. [0004] The traditional blue light GaN-based LED epitaxial structure such as figure 1 As shown, from bottom to top are: sapphire patterned substrate 1, AlN buffer layer 2, U-type GaN layer 3, N-type GaN layer 4, active l...

Claims

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Application Information

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IPC IPC(8): H01L33/32H01L33/12H01L33/10
Inventor 田宇郑建钦吴真龙曾颀尧李鹏飞
Owner NANTONG TONGFANG SEMICON