Black phosphorene film memory and preparation method thereof

A technology of black phosphorene and memory, applied in the field of memory, can solve the problems of insufficient research and development, and achieve the effect of fast conversion speed and stable reading and writing voltage

Active Publication Date: 2017-05-31
GRIMAT ENG INST CO LTD
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Black phosphorene has excellent properties, but as a new type of material, its research and development is not deep enough, especially in the fie

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Black phosphorene film memory and preparation method thereof
  • Black phosphorene film memory and preparation method thereof
  • Black phosphorene film memory and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] figure 2 The flow chart of preparing black phosphorene thin film memory through photolithographic patterning process for this embodiment includes:

[0041] (01)Al 2 o 3 substrate cleaning;

[0042] (02) Deposit Ni / Au bottom electrode layer;

[0043] (03) transfer the black phosphorene film to obtain the black phosphorene film layer;

[0044] (04) Forming a top electrode pattern through a photolithographic patterning process;

[0045] (05) depositing an Ag top electrode layer;

[0046] (06) Degumming and stripping technology to form a storage unit;

[0047] (07) Forming a cladding layer pattern by a photolithographic patterning process;

[0048] (08) Deposition of Al 2 o 3 cladding layer;

[0049] (09) Degum removal and peeling to form a coated storage unit.

[0050] The basic structure of the black phosphorene thin film memory is obtained as figure 1 As shown, it includes a substrate 1 , a bottom electrode 2 , a black phosphorene thin film layer 3 and a top...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The present invention relates to a black phosphorene film memory and a preparation method thereof. The preparation method of the black phosphorene film memory comprises the following steps: (1) cleaning a substrate; (2) forming a bottom electrode on the substrate; (3) forming the black phosphorene film layer on the bottom electrode; (4) forming the graph of a top electrode on the black phosphorene film layer through a composition process; (5) forming the top electrode on the black phosphorene film layer, and obtaining a memory unit; (6) forming the graph of a cladding layer at the upper side of the memory unit through the composition process; and (7) finally forming the cladding layer to allow the cladding layer to coat the part of the black phosphorene film layer without being coated with the top electrode, and obtaining the memory. The black phosphorene film memory is rapid in the transforming speed and stable in read-write voltage.

Description

technical field [0001] The invention belongs to the field of memory technology, in particular to a black phosphorene thin film memory and a preparation method thereof. Background technique [0002] According to the prediction of the development trend of the integrated circuit field by the International Semiconductor Technology Roadmap (ITRS), by about 2020, the feature size of integrated circuits will be reduced to less than 10 nanometers, so that traditional devices will face a series of technical and physical limitations. challenge. At this time, it is necessary to introduce new materials to solve many problems that cannot be solved by traditional devices. Two-dimensional crystals are nanometer-thick planar crystals stacked by several layers of monoatomic layers. They have unique electrical, optical, and magnetic properties, and have their own unique structural advantages. Therefore, common two-dimensional materials such as graphene, Silene, molybdenum disulfide, and bla...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L27/105
CPCH01L27/105
Inventor 赵鸿滨屠海令张国成魏峰杨志民姚俊奇
Owner GRIMAT ENG INST CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap