Helical five-bit distributed MEMS phase shifter based on RF MEMS switches

Abstract

The invention discloses a helical five-bit distributed micro-electro-mechanical system phase shifter based on a radio-frequency micro-electro-mechanical system switch, and mainly aims to solve the existing problems that working frequency and reliability are low, area is large and signals are easily distorted. The phase shifter comprises a substrate (45), a substrate insulating layer (47), a coplanar waveguide left ground wire (41), a coplanar waveguide right ground wire (44), a coplanar waveguide signal wire (42), a radio-frequency micro-electro-mechanical system switch group (43) and a direct-current bias point range (46), the coplanar waveguide left ground wire, the coplanar waveguide signal wire and the coplanar waveguide right ground wire are distributed on the substrate according to a circular spiral wiring mode, the radio-frequency micro-electro-mechanical system switch group comprises thirty-one capacitive radio-frequency micro-electro-mechanical system switches of five units, switches in each unit are parallelly connected, and bias voltage is simultaneously loaded, so that different five-bit phases are changed. According to the phase shifter, working frequency can reach 40GHz or more, the phase shifter has the advantages that the phase shifter is small in area and high in reliability, high-frequency signals are not easily distorted, and the phase shifter can be used for receiving / transmitting components of radar antennas.

Description

technical field [0001] The invention belongs to the technical field of electronic devices, and in particular relates to a helical five-bit distributed micro-electromechanical phase shifter, which can be used for receiving / transmitting components of radar antennas whose operating frequency range is 40 GHz and above. technical background [0002] Traditional phase shifters are generally implemented based on ferrite materials, PIN diodes, field effect transistors, and FET switches. Among them, the ferrite material phase shifter is small in size and light in weight, but has the defects of complex manufacturing process and high production cost, and is limited by high operating frequency; the phase shifter of PIN diode and FET switch, the former is small in size and light in weight , the latter DC power is extremely low, but the loss of the semiconductor switch is large and the power handling capacity is low. Due to the limitations of comprehensive performance such as volume, cos...

AI Technical Summary

Problems solved by technology

[0005] 1) Using metal-air-metal capacitors in series with micro-electromechanical switches, complex processing and reduced reliability

[0006] 2) The impedance matching of the right-angle convolution structure is poor, and the high-frequency microwave signal is easily distorted

[0007] 3) Difficult to meet the actual engineering requirements for operating frequencies of 40GHz and above

[0010] 1) 62 micro-electromechanical switches are used, which occupy a large area and reduce reliability

[0011] 2) If the aspect ratio is too large, the device is brittle and the reliability is reduced

[0012] 3) Difficult to meet the actual engineering requirements for operating frequencies of 40GHz and above

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