Method for extracting thermal resistance of SOI MOS device
A technology of MOS devices and thermal resistance, which is applied in the field of semiconductors, can solve the problems of expensive equipment and achieve the effect of simple cost and simple measurement method
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[0025] The embodiment of the present application solves the technical problem of expensive equipment in the prior art that the PIV method measures the thermal resistance by providing a method for extracting the thermal resistance of the SOI MOS device. A simple and low-cost thermal resistance measurement method is realized.
[0026] In order to solve the above technical problems, the general idea of the technical solution provided by the embodiments of the present application is as follows:
[0027] This application provides a method for extracting thermal resistance of an SOI MOS device, including:
[0028] When the first MOS device is in a non-operating state, test the sub-threshold slope of the second MOS device at different temperatures to obtain sub-threshold slope standard data; wherein, the difference between the first MOS device and the second MOS device The distance is less than or equal to the preset distance;
[0029] Under the first ambient temperature, testing the curr...
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