A method for directly growing zinc oxide nanocolumn arrays on a substrate
A ZnO nano-column array technology, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve the problems of high dislocation density, limited substrate selectivity, and low defect density in ZnO epitaxial layers. Achieve the effects of overcoming the limitations of substrate selection, widening the preparation and application, and simplifying the preparation and application
Active Publication Date: 2019-01-01
XIAMEN UNIV
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Problems solved by technology
Although sapphire is used as the substrate for ZnO film growth, there is a large lattice mismatch between them, which leads to a high dislocation density in the ZnO epitaxial layer, further degrading the device performance
In addition, if only homoepitaxy is used, although no strain and low defect density can be achieved, the selectivity of the substrate is limited.
Method used
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Embodiment Construction
[0026] Embodiments and steps of the present invention will be specifically described below in conjunction with the accompanying drawings.
[0027] 1. First, the polishing treatment of the Cu substrate and the growth of a single layer of h-BN.
[0028] 1) Cut out all the dimensions of the copper foil substrate, then place it in the prepared electrolyte solution, apply a voltage of 4.8V, a current of 3A, and polish for 2 minutes. Take out the copper foil, first rinse it with deionized water and then alcohol, and dry it with nitrogen gas to obtain a copper foil substrate with a smoother surface.
[0029] 2) Use an analytical balance to weigh 6g of borazane as a source and put it into the reaction zone of the front zone, put the polished copper foil into the reaction zone of the back zone, and set the temperature, the temperature of the front zone is set to 90°C, and the temperature of the reaction zone is set to 1050°C. Start heating, when the temperature in the reaction zone re...
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Abstract
The invention discloses a method for directly growing zinc oxide nanopillar arrays on a substrate and relates to growing methods of the zinc oxide nanopillar arrays. The method which is simple and extensive in zinc oxide preparation process includes: using CVD to grow a monoatomic-layer boron nitride thin film on the surface of a substrate; using a PMMA auxiliary method to transfer the boron nitride thin film to allow the surface of a target substrate to be covered with the boron nitride thin film; removing the PMMA protecting film; placing the metal substrate covered with the boron nitride thin film into a reaction cavity, and using a zinc oxide nanopillar growing method to directly grow neat zinc oxide nanopillar arrays. The method has the advantages that the substrate selection limitation in existing zinc oxide nanopillar array growing is overcome, the zinc oxide nanopillar arrays excellent in quality are grown successfully, the preparation and application of the zinc oxide nanopillar arrays are allowed to be simple and extensive, the zinc oxide nanopillar arrays can be directly grown on the flexible substrate, and the zinc oxide nanopillar array can be favorably applied to microelectronic devices.
Description
technical field [0001] The invention relates to a growth method of a zinc oxide nanocolumn array, in particular to a technology for directly growing a zinc oxide nanocolumn array on any substrate. Background technique [0002] With the vigorous development of microelectronic device technology, nanotechnology will set off a new revolution in the field of electronic products. Nanomaterials, which used to be mysterious, have gradually integrated into people's lives and are used in every aspect of people's lives. Among them, zinc oxide nanomaterials, which have broad application prospects, are favored by many scholars because of their excellent characteristics. Zinc oxide is an excellent semiconductor material. It has a large energy band gap and exciton binding energy, high transparency, and excellent room temperature luminescence performance. It can be applied to many electronic devices such as liquid crystal displays, thin film transistors, and light emitting diodes. The res...
Claims
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IPC IPC(8): C30B23/06C30B29/66C23C16/34B82Y40/00B82Y30/00
CPCB82Y30/00B82Y40/00C23C16/342C30B23/06C30B29/66
Inventor 蔡端俊孙飞鹏马吉
Owner XIAMEN UNIV