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Memristor-based neuron circuit

A technology of neurons and memristors, applied in the field of neuron circuits, can solve the problems of few reports on neuron circuits, and achieve the effect of overcoming the delay of discharge time

Active Publication Date: 2017-06-13
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
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Problems solved by technology

[0007] However, there are few reports on neuron circuits based on memristors, which is an urgent problem to be overcome.

Method used

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  • Memristor-based neuron circuit

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Embodiment

[0035] In this solution, the synaptic array is a memristor array, and the adder forms an inverting summer through an operational amplifier combined with a resistor, and then connects an inverter to restore the voltage polarity and integrate the input signals. The memristor expressing neuron membrane potential is memristor 2, which is connected to the output terminal of the inverter. In the present invention, dendrites and axons of neurons are expressed by wires. The other end of the memristor 2 is divided into two circuits, one of which is connected to the voltage dividing resistor R c , the other is connected to a comparator, and the output terminal of the comparator is connected to a Spike signal generator. The selection of the corresponding device should match the resistance of the memristor array and the memristor 2, in a similar order of magnitude, see for details Figure 4 .

[0036] The synaptic array is a memristor array using Ni / Nb-SrTiO 3 / Ti (nickel / niobium dope...

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Abstract

The invention discloses a memristor-based neuron circuit. According to the neuron circuit, partially volatile bipolar resistive transition devices are selected and used as memristors of a synapse array, and a volatile resistive transition device is selected and used as a memristor for expressing membrane potential of neurons, so that the neuron circuit is formed; and synapse basis units are arranged. The neuron circuit can realize an integral discharge function in biological neurons and express local graded potentials; and synapses have partial volatility, can express spike-timing-dependent plasticity, and have great similarity with biological neurons and synapses in the aspects of information storage, transmission and processing. According to the neuron circuit, the basic units can be provided for hardware to simulate a cerebral neural network structure; the technical problems of neuron discharge time delay, difficulty in realizing high-density integration and the like in the prior art are solved; and the neuron circuit can be used for constructing a brain-like information processing system, can quickly process a large amount of information in parallel, and has a greatly high application value in realizing a cerebral neurologic calculation network.

Description

technical field [0001] The invention belongs to the field of semiconductor information, and in particular relates to a neuron circuit based on a memristive device. The circuit is a basic unit of neurons and synapses used in artificial neural networks. It has great similarities with biological neurons and synapses in information storage, transmission and processing, and can be used to construct brain-like neurons. computing network. Background technique [0002] The human brain is superior to most contemporary computers in terms of cognitive function, language understanding, and abstract reasoning. It also has the characteristics of small size, low power consumption, high efficiency, and fault-tolerant parallel computing. Traditional computers are based on the von Neumann structure, information processing and storage are performed separately, and parallel computing capabilities are not strong. Unlike computers, in the brain, information is processed and stored simultaneousl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06N3/063
CPCG06N3/063
Inventor 杨蕊郭新谈征华洪庆辉尹雪兵黄鹤鸣王小平
Owner HUAZHONG UNIV OF SCI & TECH
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