The invention discloses a control method applicable to a resistance changing memory resistor of a nerve cell circuit. According to the control method disclosed by the invention, two ports of a resistance changing memory resistor are respectively connected with a drain terminal and a source terminal of an MOS (metal oxide semiconductor) transistor, a parallel connection structure is formed, the parallel connection structure is respectively connected with a front nerve cell and a rear nerve cell, and a gate voltage is added on a gate terminal of the MOS transistor. according to the invention, the resistance changing memory resistor is connected with the MOS transistor in parallel, in a study state, the resistance changing memory resistor is set to a preset resistance value by adjusting the gate voltage of the MOS transistor; and in a calculation state, channel resistance of the MOS transistor is controlled by virtue of the gate voltage, thus resistance value of the parallel connection structure of the resistance changing memory resistor and the MOS transistor is accurately controlled, and the resistance of the parallel connection structure is rapidly and accurately adjusted. Area of the MOS transistor can be small, thus being beneficial to large-scale integration; meanwhile, the gate voltage of the MOS transistor is controlled, change of the resistance of the resistance changing memory resistor can be realized, and resistance floating can be accurately controlled.