Neural simulation circuit

A neural simulation and circuit technology, applied in the field of circuits, can solve the problem that the threshold characteristics of neuron cells cannot be well simulated.

Inactive Publication Date: 2017-03-01
HUAWEI TECH CO LTD
View PDF3 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The cell membrane of a neuron cell has a capacitance, called membrane capacitance, and the membrane capacitance has a threshold characteristic, that is, when a neuron cell receives an excitation signal exceeding the threshold value of the membrane capacitance, the neuron cell will transmit the exc...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Neural simulation circuit
  • Neural simulation circuit
  • Neural simulation circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are a part of the embodiments of the present invention, rather than all the embodiments.

[0025] figure 2 It is a schematic circuit diagram of a neural analog circuit of an embodiment of the present invention. figure 2 The neural analog circuit 20 in the includes a first neuron circuit 21. The first neuron circuit 21 can be connected to the second neuron circuit through a memristor ME, and is between the first neuron circuit 21 and the second neuron circuit. To transmit signals, the first neuron circuit 21 includes:

[0026] The first circuit 22, the first terminal of the first circuit 22 and the input terminal V of the first neuron circuit 21 in Connected, the second terminal of the first circuit 22 is connected to the output termin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The embodiment of the invention provides a neural simulation circuit, and the circuit comprises a first circuit, wherein the first end of the first circuit is connected with the input end Vin of a first neuron circuit, and the second end of the first circuit is connected with the output end Vout of the first neuron circuit; a capacitor C1, wherein the first end of the capacitor C1 is connected with the third end of the first circuit, and the second end of the capacitor C1 is connected with the ground; a second circuit, wherein the input end of the second circuit is connected with the third end of the first circuit, the output end of the second circuit is connected with the output end Vout of the first neuron circuit, and the second circuit is switched on when the voltage of the first end of the capacitor C1 is greater than a voltage threshold value; and a switching tube T1, wherein the input end of the switching tube T1 is connected with the third end of the first circuit, the output end of the switching tube T1 is connected with the ground, and the control end of the switching tube T1 is connected with the output end Vout of the first neuron circuit. According to the embodiment of the invention, the circuit can simulate the threshold characteristic of theca cells.

Description

Technical field [0001] The present invention relates to the field of circuits, and more specifically, to a neural analog circuit. Background technique [0002] Memristor (Memristor) is the fourth basic circuit element in addition to resistance, capacitance, and inductance. It is used to express the relationship between magnetic flux and charge. The memristor has the same unit (ohm) as the resistance, and is non-volatile, and the memristive value changes only when current flows. With the in-depth development of the research on the memristor, the memristor is used to simulate the memory and calculation functions of the biological nervous system. [0003] Such as figure 1 As shown, in the prior art, a neural analog circuit generally includes two neuron circuits (or neuron cell circuits) and a resistive memristor as a synaptic connection between the two, where each neuron circuit includes : Excitation signal terminal P, synapse connection terminal M, buffer (inverter N2 and inverter ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03K3/02G06N3/063
Inventor 张以德曾志刚温世平曹明富赵俊峰
Owner HUAWEI TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products