Resistance-adjustable-memristor-based time-related learning neuron circuit and implementation method thereof

A resistive memristor and time correlation technology, applied in the field of neuron cell circuits, can solve the problems of lack of learning ability and learning function, and achieve the effect of simple structure, high integration degree and good application prospect.

Active Publication Date: 2013-08-14
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, the calculation function of the digital computer has been completed in the design stage, but after the computer design is completed, the computer only reproduces the logic that has been set, and does not have the ability to learn independently, and does not have a real learning function

Method used

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  • Resistance-adjustable-memristor-based time-related learning neuron circuit and implementation method thereof
  • Resistance-adjustable-memristor-based time-related learning neuron circuit and implementation method thereof
  • Resistance-adjustable-memristor-based time-related learning neuron circuit and implementation method thereof

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Embodiment Construction

[0031] Below in conjunction with accompanying drawing, the present invention will be further described by examples.

[0032] Such as figure 1 As shown, the present invention is based on the time-associated learning neuron circuit of the resistive memristor including: two neuron cell circuits 1 and 2 and the resistive memristor 3 as the synaptic connection between the two; further, as figure 2 As shown, the neuron cell circuit includes: an excitation signal terminal P, a synaptic connection terminal M, a buffer, a control signal inverter N1, a first transmission gate T1 and a second transmission gate T2; wherein,

[0033] The output terminal out of the buffer is connected to the excitation signal terminal P, and the input terminal in is connected to a signal terminal of the second transmission gate T2;

[0034]The input terminal in of the control signal inverter N1 is connected to the excitation signal terminal P, the positive control terminal S of the first transmission gate...

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Abstract

The invention discloses a resistance-adjustable-memristor-based time-related learning neuron circuit and an implementation method thereof. According to the invention, switching characteristics of a resistance-adjustable memristor are utilized, when two ends of the memristor are synchronously selected by two excitation signals, voltage drop capable of enabling the memristor to generate resistance adjustment is formed at the two ends of a device, the connection or disconnection of a synapse is realized, the correlation or noncorrelation of the two excitation signals is realized, a memory characteristic is realized, and the previous excitation signals can be repeated, so a learning goal is achieved. The resistance-adjustable memristor is simple in structure, and high in integration level, so that the connection of large-scale physical neuron synapses is realized so as to achieve a more complicated learning or even logic function. The neuron circuit and the implementation method thereof disclosed by the invention have a good application prospect in the neuron calculation.

Description

technical field [0001] The invention relates to a neuron cell circuit, in particular to a time-associated learning neuron circuit based on a resistive memristor and an implementation method thereof. Background technique [0002] Digital computer is an important product of the progress of human science and technology civilization in the 20th century, and its influence penetrates into every aspect of people's life. However, with the development of the computer industry and the progress of the microelectronics industry, people can no longer be satisfied with the functions of existing computers. High computing speed, large storage capacity, and intelligence have become an inevitable trend for the further development of computers. Due to its characteristics of large-scale parallel processing, strong recognition ability, ability to process analog information, and machine self-learning, neural computers will become a powerful substitute for digital computers in the future. The key ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06K19/00G06N3/02
CPCG06N3/049G11C11/54G11C13/0007G06N3/065G06N3/08
Inventor 黄如张耀凯蔡一茂杨帆潘越王宗巍方亦陈
Owner PEKING UNIV
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