Resistance-adjustable-memristor-based time-related learning neuron circuit and implementation method thereof
A resistive memristor and time correlation technology, applied in the field of neuron cell circuits, can solve the problems of lack of learning ability and learning function, and achieve the effect of simple structure, high integration degree and good application prospect.
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[0031] Below in conjunction with accompanying drawing, the present invention will be further described by examples.
[0032] Such as figure 1 As shown, the present invention is based on the time-associated learning neuron circuit of the resistive memristor including: two neuron cell circuits 1 and 2 and the resistive memristor 3 as the synaptic connection between the two; further, as figure 2 As shown, the neuron cell circuit includes: an excitation signal terminal P, a synaptic connection terminal M, a buffer, a control signal inverter N1, a first transmission gate T1 and a second transmission gate T2; wherein,
[0033] The output terminal out of the buffer is connected to the excitation signal terminal P, and the input terminal in is connected to a signal terminal of the second transmission gate T2;
[0034]The input terminal in of the control signal inverter N1 is connected to the excitation signal terminal P, the positive control terminal S of the first transmission gate...
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