Method for improving the performance of fin field effect transistor
A fin field effect transistor and performance technology, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problem that the electrical performance of the fin field effect transistor needs to be improved, so as to improve reliability and electrical performance, and increase the thickness of the oxide layer. The effect of uniformity
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[0031] It can be seen from the background art that the electrical performance of the fin field effect transistor formed in the prior art needs to be improved.
[0032] The gate dielectric layer of the FinFET includes an oxide layer covering the top surface and the sidewall surface of the fin, and the quality of the oxide layer has an important influence on the performance of the FinFET. It is found through research that the top of the fin has a corner region, which is the boundary region between the top surface of the fin and the sidewall surface, and there is a certain stress in the corner region. Usually, an oxidation process is used to oxidize the top surface and the sidewall surface of the fin to form the oxide layer. However, due to the influence of the stress in the corner region, the oxidation rate of the fin portion in the corner region is relatively small, resulting in a thinner oxide layer formed in the corner region.
[0033] Due to the thin thickness of the oxide ...
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