97results about How to "Avoid tip discharge" patented technology

The invention relates to a power module cascading inversion valve, which is characterized in that: the valve comprises a cabinet body consisting of a plurality of single cabinets, wherein each single cabinet is divided into three layers of module frames, each layer of module frame is provided with a detachable power module, and the power modules and the power modules and the module frames are all supported and connected through insulators; slide rails are arranged in the module frames, the power modules are arranged movably on the slide rails, and wire fasteners capable of fixing the three-phase alternating current incoming cables of the power modules are arranged on the bottoms of the module frames. The invention meets the press resistant requirements with compact structure, orderliness and good appearance; the invention enables free arrangement of the cascading number of the power modules according to the requirements of power grade, thereby bringing about very convenient power expansion.

The invention provides a diode chip and a processing technology thereof, relating to a semiconductor discrete device and a processing technology thereof. The invention can overcome discharge in detection and creepage phenomenon in use. A circle of glassy protective layer is arranged at the edge of a chip, the horizontal projection of the chip is of a closed shape with no corner; the side edge is provided with a circle of semi-insulating polycrystalline silicon (SIPOS) film; and the glassy protective layer covers 70-95% of the upper part of the SIPOS film. The processing technology provided bythe invention comprises the following steps: 1) graving a wafer split pattern; 2) passivating the SIPOS film; 3) processing the glassy protective layer; 4) photoengraving three times; 5) cleaning; 6)removing photoresist; 7) splitting to obtain the chip. By the adoption of the invention, the point discharge of a square chip can be effectively prevented and the withstand voltage capacity of a diode can be improved. Before passivation with glass, passivation with an SIPOS film is carried out to absorb movable ions on the surface of the chip, thus the stability can be enhanced and the withstand voltage capacity can be improved; meanwhile, the bottoms of grooves still remains the SIPOS film and an SIO2 film, thus preventing Au layer adhesion in Au evaporation.

A method for improving performance of a fin field-effect transistor comprises the steps of providing a substrate, wherein fin parts are arranged on a surface of the substrate, isolation layers are also arranged on the surface of the substrate and cover surfaces of a part of side walls of the fin parts, and the fin part higher than top parts of the isolation layers comprises a first fin part and a second fin part; performing non-crystallization ion injection on the first fin part and the second fin part, forming a first non-crystallization layer on a surface of a side wall of the first fin part, and forming a second non-crystallization layer on the surface of the top part and the surface of the side wall of the second fin part, wherein the thickness of the second non-crystallization layer is larger than the thickness of the first non-crystallization layer; and oxidizing the first fin part and the second fin part, and forming oxide layers on the surface of the top part and the surface of the side wall of the second fin part and the surface of the side wall of the first fin part. By the method, the thickness uniformity of the formed oxide layers is improved, particularly, the performance of the oxide layers at corners of the top parts of the fin parts can be improved, and the reliability and the electrical property of the fin field-effect transistor are further improved.

The invention relates to a damper for 1000kV extra-high voltage alternative-current transmission lines in power sector, which comprises a cable clamp, two damper bodies, a steel strand and at least one preformed armor rod. The cable clamp and the steel strand are fixedly connected; the two damper bodies are respectively fixed on the two ends of the steel strand; the preformed armor rod fixes the cable clamp on a power transmission line; the cable clamp is in a sea horse shaped structure; the damper bodies are in a kirsite cucurbit shaped structure; and the connection position of the steel strand and the damper bodies is arranged on the sides of the fixing end damper heads of the damper bodies. Since the cable clamp is provided with a separation nail, the damper can be effectively connected with a power transmission cable; and hangers of the cable clamp, as well as corners of the cable clamp, which are used for fixing conduits, are designed in to an arc shape, thereby avoiding marginaldischarge; since the damper bodies made of kirsite are cast into a cucurbit shape, the specific gravity of the damper bodies is improved and the volume of the damper bodies is reduced; and since the connection between the windward side of the damper head at a cantilever end and the damper heads is designed into an arc shape and the size of the arc is controlled in a certain range, the marginal discharge can be avoided.

A semiconductor structure and a forming method thereof are provided. The semiconductor structure comprises a substrate, gate structures, source-drain doping regions, a dielectric layer, a metallide and plugs. The gate structures are located on the substrate, and grooves are respectively arranged in the substrate on the two sides of the gate structures. The source-drain doping regions are located in the bottoms and side walls of the grooves. The dielectric layer is located on the substrate, covers the side walls of the gate structures, and has contact holes. The contact holes are communicated with the grooves. In the direction parallel to the lengthwise direction of the grooves, the size of the grooves is larger than the size of the contact holes. The metallide is located on the bottom andside wall surfaces of the grooves. The plugs are located in the contact holes and the grooves. The metallide is located between the plugs and the source-drain doping regions. The semiconductor structure can reduce the contact resistance between the metallide and the source-drain doping regions.

A semiconductor device and a forming method thereof are provided. The forming method of the semiconductor device comprises the following steps: providing a substrate; forming a lamination structure covering the surface of the substrate, wherein the lamination structure includes a first stress layer disposed on the surface of the substrate, an intrinsic layer disposed on the surface of the first stress layer and a second stress layer disposed on the surface of the intrinsic layer, the lattice constant of the first stress layer is smaller than the lattice constant of the intrinsic layer, and the lattice constant of the intrinsic layer is smaller than the lattice constant of the second stress layer; forming a gate structure on the surface of the second stress layer; etching the lamination structure on the two sides of the gate structure to form grooves; and forming a third stress layer filling the grooves, wherein the lattice constant of the third stress layer is greater than the lattice constant of the first stress layer. The leakage current in the semiconductor device is reduced and the source-to-drain punch-through problem of the semiconductor device is inhibited while the carrier mobility of the semiconductor device is improved.

The invention discloses a method for forming a silicon oxide side wall of the gate of metal tungsten silicide. The method includes the steps that a gate structure composed of gate oxide, gate polycrystalline silicon and the metal tungsten silicide is formed, and the top of the gate structure is protected by photoresist; the RIE process of process gas including carbon tetrafluoride is utilized to conduct ashing processing on the photoresist; a silicon substrate on which the RIE process is conducted is rinsed with deionized water; the RTO process is conducted, and then the silicon oxide side wall is formed on the side wall of the gate structure. By the adoption of the method, grains of the metal tungsten silicide can be prevented from growing to form spherical protrusions when the silicon oxide side wall grows, point discharge caused by the spherical protrusions can also be avoided, and breakdown voltages of devices are increased; in addition, process cost can be reduced. According to the silicon oxide side wall formed through the method, stress between a silicon nitride layer and a gate polycrystalline silicon side wall can be reduced, and lattice defects of the gate polycrystalline silicon side wall can be repaired.

The invention relates to a high-pass radio frequency filter, which comprises a resonant cavity, a cover plate and a resonant column arranged in the resonant cavity, the length of the resonant column is adjustable, a tuning screw rod is connected to the resonant column, the tuning screw rod penetrates out of the cover plate, and the resonant column participates in working length adjustment in the resonant cavity. The resonance column comprises a fixed part fixedly connected with the inner surface of the cover plate and a movable part sleeved with the fixed part, and the movable part is fixedlyconnected with the tuning screw rod; according to the high-pass radio frequency filter, the arrangement of various structures and components in the resonant cavity of the filter in the prior art is solved, the existence of sharp corners in one or the cavity is avoided, and meanwhile, the length of the resonant column is adjustable, and the output frequency is high.

The invention discloses an optical direct current measuring device for direct current high-voltage transmission. The high-voltage primary end adopts an all-fiber sensing mode, the primary end and thesecondary end adopt a polarized light transmission scheme of segmentally folded silicone rubber insulator pre-embedded polarization-maintaining fiber, and the secondary end adopts a high-speed opticalmodulation and demodulation scheme to realize the direct current measurement. A sensing optical fiber ring loop body and an upper flange structure are located at the top of an upper high voltage polarization-maintaining fiber insulator, an upper equalizing ring in located on the outer periphery of a sensing optical fiber ring body, a middle equalizing ring is located at the junction of insulatorsat both ends, a lower flange structure and a lower fiber storing box body are located at the bottom of the insulators, a high-speed demodulation unit is located on the secondary side. The optical direct current measuring device is suitable for current measurement of a high-voltage direct current, especially an extra-high voltage flexible direct current polarity bus direct current, and the performance of a control protection system is improved.

The invention provides a tubular busbar connection structure. The tubular busbar connection structure comprises a first tubular busbar and a second tubular busbar which are telescopically assembled. One end of the first tubular busbar is arranged in the second tubular busbar. A contact extending along the axial direction of the tubular busbar is fixedly arranged in one of the tubular busbars, and a contact finger matched with the contact is fixedly arranged in the other tubular busbar. The annulus between the first tubular busbar and the second tubular busbar is provided with a limiting structure used for preventing radial swinging of the two tubular busbars. The first tubular busbar can be inserted into the second tubular busbar and can telescopically move. The contact and the contact finger which can be conducted with the tubular busbars are correspondingly arranged in the first tubular busbar and the second tubular busbar so that constant conduction can be guaranteed in telescopic movement of the two tubular busbars. Radial swinging of the first tubular busbar and the second tubular busbar can be prevented by the limiting structure so that the situation that the certain part of the contact finger is affected by excessive pressure and damaged can be prevented. The contact and the contact finger are installed in the tubular busbars without the influence of corona.

The invention discloses a securities microwave processing device based on transverse waves. The securities microwave processing device based on transverse waves comprises a microwave generator moduleand a microwave work cavity, wherein the microwave work cavity comprises one or a plurality of accommodating regions; the accommodating regions are used for placing securities; each accommodating region comprises a carrying surface; the carrying surface is used for carrying the securities in a state of approximately parallel to the surface of the securities; the carrying surface is vertical to thethickness direction of the securities; the microwave generator module is used for generating microwaves, and enabling the microwaves to enter the microwave work cavity from one side or a plurality ofsides of the microwave work cavity; the microwaves are spread in a mode of transverse waves in an unmixed mode in the accommodating region; and in addition, the microwaves do not have a magnetic-field component in a direction of being vertical to the carrying surface. By using the securities microwave processing device based on transverse waves, the microwave sterilization and disinfection of thesecurities can be realized; and in addition, the surface printing characteristics and the machine read anti-counterfeiting performance of the securities cannot be damaged.

The invention provides a sealing screw assembly and a connecting screw thereof. The sealing screw assembly comprises the connecting screw, the connecting screw comprises a screw head and a threaded connecting section, and the screw head is in a step shape comprising a large-diameter section and a small-diameter section. The small-diameter section is located between the large-diameter section and the threaded connecting section, and a sealing ring is mounted on the small-diameter section. According to the sealing screw assembly, through the sealing ring on the small-diameter section of the screw head, the airtightness ata connecting screw hole can be ensured when the large-diameter section of the screw head and a connecting face plate are pressed, fastened connection is achieved, and the sealing performance of the connecting position is ensured.

The invention discloses a high-altitude LED lamp automatic replacement method, and relates to the technical field of lamp construction. The high-altitude LED lamp automatic replacement method specifically comprises the following steps that S1, lamp installation is carried out, specifically, during installation, firstly a plurality of LED lamps are prepared, one of the lamps is used as a main light-emitting lamp and the other of the lamps are used as standby lamps, and the prepared LED lamps are installed and fixed on a high-altitude LED lamp automatic replacing device according to a certain sequence in the high altitude; and S2, real-time detection is carried out, specifically, real-time monitoring and detection are carried out the main light-emitting lamp at night through the high-altitude LED lamp automatic replacement device. The high-altitude LED lamp automatic replacement method has the beneficial effects that through a series of improvements, the device can fix the lamps and automatically replace the lamps, so that the device can continuously and effectively emit light, and meanwhile, the possibility of accidents caused by frequent manual replacement is effectively prevented.

The invention discloses a microwave disinfection and sterilization device for negotiable securities. The microwave disinfection and sterilization device comprises a microwave working cavity and at least one microwave generator, wherein the microwave working cavity comprises one or a plurality of negotiable securities containing areas; two sides of each negotiable securities containing area are independently provided with a first baffle plate and a second baffle plate; the first baffle plate and the second baffle plate are opposite; in addition, the first baffle plate and the second baffle plate are set to be in parallel with a bearing surface of each negotiable securities containing area; the first baffle plate and the second baffle plate are independently made of microwave non-penetratingmaterials; and an interval between the first baffle plate and the second baffle plate is not greater than the half wavelength of the microwave. Two sides of each negotiable securities containing areaare independently provided with the baffle plate made of the microwave non-penetrating materials, the interval between two layers of baffle plates and the wavelength of the microwave meet a certain proportional relation, a non-mixed-mode electromagnetic wave can be realized, and the negotiable securities can prevent from being carbonized and burnt down.

The invention discloses a temperature monitoring system and method for a high-voltage charged body with a zero power consumption chip implantation and wireless network mode. The temperature monitoring system comprises a computer, a database, a zero power consumption chip sensor and a radio transceiver, wherein temperature-sensing elements of piezoelectric materials are integrated inside the zero power consumption chip sensor; the zero power consumption chip sensor, a thin-type chip, is integrated with an interdigital transducer and a semiconductor having a "seebeck effect" , and is pasted onto the surface of the high-voltage charged body with a heat transfer coating material as a medium. With a temperature sensing mode which is characterized in that the zero power consumption chip is directly implanted into the high-voltage charged body, the theoretical power consumption of the chip is zero, and thus defects of current sensing modes in the prior art are compensated; besides, with the adoption of a wireless network transmission mode, a full isolation is really realized. With the technical scheme, problems of insulation and power supply in temperature measuring of the high-voltage charged body are completely solved, and the high-voltage charged body can be monitored online in real time.

The invention discloses an ITO coating process for preventing a membrane surface from discharging. The process comprises the following steps: firstly, cleaning a target surface, a vacuum chamber and a substrate; then putting the cleaned substrate on the preset position, detecting the distance between the substrate and a target, thus obtaining a first distance value; and finally judging whether the first distance value is greater than the first preset distance value or not, if so, carrying out coating operation, if not, carrying out warning operation. The ITO coating process is reasonable in design, the distance between the substrate and the target is reasonably controlled, the gas composition content in the vacuum chamber is effectively controlled, the cleaning effect on the target surface, the vacuum chamber and the substrate is relatively good, discharge of the membrane surface is reduced, and the product achieves the technical effects of technological requirements.

The invention provides an energy-saving and environment-friendly high-voltage closed bus. The bus comprises a shell and three busbars, wherein the three busbars are uniformly and fixedly arranged in the shell; and the included angle alpha between the adjacent busbars is 120 degrees. The bus has the following beneficial effects: as the three busbars are uniformly and fixedly arranged in the shell and the included angle alpha between the adjacent busbars is 120 degrees, the synthetic magnetic potential among the busbars is zero; and during distance power transmission, the three busbars are uniformly symmetric, thus avoiding the problem of complex phase change needing to be considered due to the proximity effect and nonuniform three-phase power transmission loss, so the bus is more convenient and safer to use.

The invention relates to the field of aviation engine maintenance equipment, in particular to a rotor blade boss energy storage spot welding repair clamping device and a clamping method. The device and the method have a quick clamping and disassembling function, have a clamping force maintaining function and simultaneously ensure that the protective belt of a low-pressure compressor rotor blade boss is in good contact with a workbench during energy storage spot welding to form a stable current loop. The device comprises an upper clamping plate and a lower clamping plate, the upper clamping plate and the lower clamping plate are rotationally connected through mounting pins arranged in an upper clamping plate mounting hole and a lower clamping plate mounting hole, torsion springs are arranged outside the mounting pins in a sleeving mode, the upper clamping plate and the lower clamping plate are driven by the torsion springs to be clamped, and the upper clamping plate and the lower clamping plate are made of red copper. The device and the method have a quick clamping and disassembling function, ensure the production efficiency and shorten the production period. The device and the method are particularly suitable for the rotor blade boss energy storage spot welding repair process.