97results about How to "Avoid tip discharge" patented technology

The invention discloses a high-voltage wire jumper wire wind-deflection-prevention suspension heavy hammer device, and solves the technical problems that in the prior art, the suspension heavy hammeris inconvenient to install, poor in stability and serious in potential safety hazards. The device comprises a heavy hammer piece and a wire clamp connecting unit connected with the heavy hammer pieceand a pole tower; the heavy hammer piece is connected with the wire clamp connecting unit through a ball head and a bowl head which are matched with each other; the heavy hammer piece comprises a center rod and a heavy hammer piece assembly detachably connected to the periphery of the center rod; each heavy hammer piece comprises at least one heavy hammer piece assembly; and the heavy hammer pieceassembly is connected with a detachable pulley assembly. According to the device, transportation, installation and maintenance are facilitated, and point discharge can also be avoided; in addition, the wind resistance is small, and the effect of reliably stabilizing the wire jumper wire is achieved. The device further has the wind deflection prevention effect on the suspension stable wire and thejumper wire, so that the space safety distance between the conductor of an electrified wire and a pole tower, a stay wire and an adjacent object is guaranteed.

The invention discloses a hydrogen peroxide low-temperature plasma sterilizer with waist-shaped holes in the electrode net. The sterilization equipment includes a cavity, a control system, a pressure probe, a vacuum pump and an electrode net. The electrode net is insulated and connected to the cavity. The cavity is positively charged, and the electrode net is negatively charged. Multiple waist-shaped through holes are evenly opened on the electrode net. This invention can generate uniform discharge during the sterilization process, and effectively protect the sterilized medical devices while sterilizing them. equipment.

A method for improving performance of a fin field-effect transistor comprises the steps of providing a substrate, wherein fin parts are arranged on a surface of the substrate, isolation layers are also arranged on the surface of the substrate and cover surfaces of a part of side walls of the fin parts, and the fin part higher than top parts of the isolation layers comprises a first fin part and a second fin part; performing non-crystallization ion injection on the first fin part and the second fin part, forming a first non-crystallization layer on a surface of a side wall of the first fin part, and forming a second non-crystallization layer on the surface of the top part and the surface of the side wall of the second fin part, wherein the thickness of the second non-crystallization layer is larger than the thickness of the first non-crystallization layer; and oxidizing the first fin part and the second fin part, and forming oxide layers on the surface of the top part and the surface of the side wall of the second fin part and the surface of the side wall of the first fin part. By the method, the thickness uniformity of the formed oxide layers is improved, particularly, the performance of the oxide layers at corners of the top parts of the fin parts can be improved, and the reliability and the electrical property of the fin field-effect transistor are further improved.