Method for improving performance of fin field-effect transistor

Abstract

A method for improving performance of a fin field-effect transistor comprises the steps of providing a substrate, wherein fin parts are arranged on a surface of the substrate, isolation layers are also arranged on the surface of the substrate and cover surfaces of a part of side walls of the fin parts, and the fin part higher than top parts of the isolation layers comprises a first fin part and a second fin part; performing non-crystallization ion injection on the first fin part and the second fin part, forming a first non-crystallization layer on a surface of a side wall of the first fin part, and forming a second non-crystallization layer on the surface of the top part and the surface of the side wall of the second fin part, wherein the thickness of the second non-crystallization layer is larger than the thickness of the first non-crystallization layer; and oxidizing the first fin part and the second fin part, and forming oxide layers on the surface of the top part and the surface of the side wall of the second fin part and the surface of the side wall of the first fin part. By the method, the thickness uniformity of the formed oxide layers is improved, particularly, the performance of the oxide layers at corners of the top parts of the fin parts can be improved, and the reliability and the electrical property of the fin field-effect transistor are further improved.

Description

Technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for improving the performance of a fin-type field effect tube. Background technique [0002] With the continuous development of semiconductor process technology, the development trend of semiconductor process nodes following Moore's Law continues to decrease. In order to adapt to the reduction of process nodes, the channel length of the MOSFET has to be continuously shortened. The shortening of the channel length has the advantages of increasing the die density of the chip and increasing the switching speed of the MOSFET field effect tube. [0003] However, as the channel length of the device is shortened, the distance between the source and drain of the device is also shortened. As a result, the ability of the gate to control the channel becomes worse, causing the phenomenon of subthreshold leakage, namely The so-called short-channel effects (SCE: short-c...

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Problems solved by technology

[0005] However, the electrical performance of the fin field effect transistor formed by the prior art needs to be improved

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