Method for improving arcing defect of MIM capacitor

An arc discharge and capacitor technology, applied in capacitors, electrical solid devices, circuits, etc., can solve problems such as arc discharge defects, and achieve the effect of improving yield and performance

Active Publication Date: 2018-06-05
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for improving arc discharge defects of MIM capacitors, and solve the technical problem of arc discharge defects in the parasitic MIM capacitors at the trench in the prior art

Method used

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  • Method for improving arcing defect of MIM capacitor
  • Method for improving arcing defect of MIM capacitor
  • Method for improving arcing defect of MIM capacitor

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Embodiment Construction

[0038] The method for improving the arc discharge defects of MIM capacitors of the present invention will be described in more detail below in conjunction with the schematic diagram, wherein a preferred embodiment of the present invention is represented, it should be understood that those skilled in the art can modify the present invention described here, and still realize the present invention Beneficial effects of the invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0039] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve ...

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Abstract

The invention provides a method for improving an arcing defect of an MIM capacitor. The method comprises the steps of: providing a semiconductor substrate, and forming an interlayer dielectric layer on a surface of the semiconductor substrate; forming a trench through which the semiconductor substrate is exposed in the interlayer dielectric layer; forming a conductive layer on the bottom wall andthe side walls of the trench; forming a lower electrode on the conductive layer and the interlayer dielectric layer; forming a filling structure on the lower electrode in the trench; and forming an interelectrode dielectric layer and an upper electrode on the lower electrode and the filling structure from bottom to top in sequence, wherein the lower electrode, the interelectrode dielectric layer and the upper electrode forms the MIM capacitor. According to the method, the flat surface can avoid the formation of tip discharge in the MIM capacitor when the upper electrode is formed, and the formation of the arcing defect in the interelectrode dielectric layer is avoid, thereby improving performance of the device and increasing the yield.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a method for improving arc discharge defects of MIM capacitors. Background technique [0002] Capacitive components are often used as electronic passive devices in integrated circuits such as radio frequency ICs, monolithic microwave ICs, and smart cards. Currently common capacitive elements include metal-oxide-semiconductor (MOS) capacitors, PN junction capacitors, and MIM (metal-insulator-metal, MIM for short) capacitors. Since MOS capacitors and PN junction capacitors are limited by their own structures, the electrodes are prone to generate a hole layer during operation, resulting in a decrease in their frequency characteristics. The MIM capacitor can provide better frequency and temperature-related characteristics, and the MIM capacitor can provide electrical characteristics better than MOS capacitors or PN junction capacitors. [0003...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/64H01L21/02
CPCH01L21/02H01L28/40
Inventor 汤锐
Owner SEMICON MFG INT (SHANGHAI) CORP
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