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High-precision laser machining method of sapphire submicron-order section

A sub-micron level, processing method technology, applied in the direction of laser welding equipment, metal processing equipment, manufacturing tools, etc., can solve the problem of laser processing depth limitation

Active Publication Date: 2017-06-27
BEIJING UNIV OF TECH
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Problems solved by technology

Germany et al. used the nonlinear effect of tightly focused femtosecond laser to irradiate microchannels on the surface or inside of sapphire, and then formed hollow microstructures by chemical ultrasound (J.Laser MicroNanoengineering, 2010,5(2):145-149.), the In the method, the laser processing depth will be limited due to the influence of the laser focal depth, and the subsequent sonochemical processing must be performed due to the tight focusing method of the femtosecond laser.

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  • High-precision laser machining method of sapphire submicron-order section

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Embodiment Construction

[0023] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0024] In order to solve the problems in the prior art and realize the fine cutting of sapphire single crystal and similar hard and brittle materials with high hardness and brittleness and corrosion resistance, the present invention provides a method for high-precision cutting of sapphire laser with submicron cut surface; it adopts picosecond ...

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Abstract

The invention discloses a high-precision laser machining method of a sapphire submicron-order section. Picosecond-order pulse width laser with high transmittance wave length to a sapphire is adopted to cause an ultrathin phase change point or an electronic state removing point from the lower surface of a material; a trace parallel to the laser incident direction is formed by laser focal point hoisting; under a chemical corrosion environment, the intersecting connection of laser acting line trace points is allocated according to a cutting path; and while a phase change area or an electronic state removing area according with the cutting path is formed, the separation of a sapphire sample along a machining path is achieved by using the catalysis effect of the picosecond laser radiation microheat effect on chemical corrosion. The method overcomes the light beam Gauss focusing mode limitations and realizes high-precision cutting of the sapphire with nearly zero taper and no heat affected zone, and can directly realize cutting of micron or even submicron-order ultrafine sapphire with high surface quality and no thickness and path limit or other same materials.

Description

technical field [0001] The invention relates to the field of laser non-ablative cutting processing of hard and brittle transparent materials, in particular to a laser high-precision processing method for submicron cut surfaces of sapphire. Background technique [0002] Sapphire is a single crystal of aluminum oxide, and its Mohs hardness is second only to diamond. Because of its special mechanics, heat, electricity, excellent radiation resistance, thermal conductivity and stable chemical properties, it is widely used in defense industry, aerospace cutting-edge technology research and civilian fields. Traditional mechanical processing methods mainly use diamond wire saws for cutting sapphire. The processing speed, processing freedom, processing quality and precision are low. Contact cutting tools such as saw wires have limited life and high loss. In contrast, laser cutting technology has the characteristics of high energy density and non-contact, which can effectively avoid ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/50B23K26/70
CPCB23K26/50B23K26/70B23K2103/50B23K26/0624B23K26/38B23K26/40B23K26/53B23K2103/54C03B33/0222C03C15/00
Inventor 季凌飞燕天阳王文豪林真源安娜
Owner BEIJING UNIV OF TECH