A device for preparing electronic grade dichlorodihydrosilane

A dichlorodihydrosilane, electronic-grade technology, applied in the direction of halosilane, silicon compound, silicon halide compound, etc., can solve the problems of high energy consumption and unstable product quality

Active Publication Date: 2020-07-21
CHINA SILICON CORP LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims to provide a device for preparing electronic-grade dichlorodihydrogen silicon to solve the technical problems of high energy consumption and unstable product quality in the prior art for preparing electronic-grade dichlorodihydrogen silicon

Method used

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  • A device for preparing electronic grade dichlorodihydrosilane
  • A device for preparing electronic grade dichlorodihydrosilane
  • A device for preparing electronic grade dichlorodihydrosilane

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] use figure 1 The process shown, using figure 2 The device shown, the specific test parameters are listed in Table 1.

[0032] Table 1

[0033]

[0034]

[0035] Under the above conditions, the purity of the product dichlorodihydrogen silicon reaches 9N, the B impurity content is 0.06ppb, the P impurity content is 0.08ppb, and the Al impurity content is 0.06ppb.

Embodiment 2

[0037] use figure 1 The process shown, using figure 2 The device shown, the specific test parameters are shown in Table 2.

[0038] Table 2

[0039]

[0040] Under the above conditions, the purity of the product dichlorodihydrosilane reaches 9N, the B impurity content is 0.02ppb, the P impurity content is 0.04ppb and the Al impurity is 0.04ppb.

Embodiment 3

[0042] use figure 1 The process shown, using figure 2 The device shown, the specific test parameters are shown in Table 3.

[0043] table 3

[0044]

[0045] Under the above conditions, the purity of the product dichlorodihydrosilane reaches 9N, the B impurity content is 0.01ppb, the P impurity content is 0.03ppb and the Al impurity is 0.03ppb.

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Abstract

The invention discloses a device for preparing electronic grade dichlorosilane; the device comprises a reactor for reaction of an aromatic aldehyde or aromatic aldehyde derivative and raw material dichlorosilane; a purification tower for removal of part of heavy components and then removal of light components and the remaining heavy components in reaction products in the reactor to obtain electronic grade dichlorosilane; and an adsorption and purification unit for further removal of impurities of the electronic grade dichlorosilane; the technology greatly shortens the process, and reduces equipment investment and running energy consumption, and the product quality can achieve the electronic grade.

Description

technical field [0001] The invention relates to the field of chemical industry, in particular to a device for preparing electronic-grade dichlorodihydrogen silicon. Background technique [0002] Electronic grade dichlorodihydrosilicon belongs to silicon source electron special gas, mainly used as silicon source gas for silicon epitaxial wafers, it is currently mainly used for orientation epitaxy of crystalline silicon, silicon nitride preparation and polycrystalline silicon in large-scale integrated circuits preparation. At present, the electronic information industry is developing rapidly. Dichlorodihydrosilane electronic gas is used as a raw material, and its market demand continues to grow. Rely on overseas markets. [0003] The market demand for dichlorodihydrogen silicon electronic gas continues to grow, but there is basically no production of electronic-grade dichlorodihydrosilane in my country, and all rely on overseas markets. At present, the production of high-pu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/107
CPCC01B33/10778C01B33/10784
Inventor 刘见华赵雄万烨郭树虎姜利霞王芳杨永亮杜俊平汤传斌严大洲
Owner CHINA SILICON CORP LTD
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