Method for preparing electron-level dichlorosilane
A dichlorodihydrosilane, electronic grade technology, applied in chemical instruments and methods, silicon compounds, halosilanes, etc., can solve the problems of unstable product quality and high energy consumption
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Embodiment 1
[0030] use figure 1 The process shown, using figure 2 The device shown, the specific test parameters are listed in Table 1.
[0031] Table 1
[0032]
[0033] Under the above conditions, the purity of the product dichlorodihydrogen silicon reaches 9N, the B impurity content is 0.06ppb, the P impurity content is 0.08ppb, and the Al impurity content is 0.06ppb.
Embodiment 2
[0035] use figure 1 The process shown, using figure 2 The device shown, the specific test parameters are shown in Table 2.
[0036] Table 2
[0037]
[0038] Under the above conditions, the purity of the product dichlorodihydrosilane reaches 9N, the B impurity content is 0.02ppb, the P impurity content is 0.04ppb and the Al impurity is 0.04ppb.
Embodiment 3
[0040] use figure 1 The process shown, using figure 2 The device shown, the specific test parameters are shown in Table 3.
[0041] table 3
[0042]
[0043] Under the above conditions, the purity of the product dichlorodihydrosilane reaches 9N, the B impurity content is 0.01ppb, the P impurity content is 0.03ppb and the Al impurity is 0.03ppb.
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