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Wafer jacking device and jacking method thereof

A technology for lifting devices and wafers, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve problems such as wafer pollution and wafer offset, and achieve pollution-free, space-saving, gentle and stable lifting processes Effect

Active Publication Date: 2017-07-07
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method will pollute the wafer due to the introduction of helium, and the helium gas flow will cause the wafer to shift

Method used

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  • Wafer jacking device and jacking method thereof
  • Wafer jacking device and jacking method thereof
  • Wafer jacking device and jacking method thereof

Examples

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Embodiment Construction

[0050] based on the following Figure 4 ~ Figure 8B , specifically explain the preferred embodiment of the present invention.

[0051] Such as Figure 4 As shown, the present invention provides a wafer jacking device, which is arranged in the plasma etching chamber. An equipment tray 3 is arranged in the etching chamber, and an electrostatic chuck 2 is arranged on the equipment tray 3. The wafer is adsorbed on the electrostatic chuck 2, and the static electricity Both the suction cup 2 and the equipment tray 3 have a number of through holes, and the through holes on the equipment tray 3 and the through holes on the electrostatic chuck 2 form a guiding channel 21. The wafer lifting device includes:

[0052] A plurality of first lifting components, which are arranged under the wafer through the guide channel 21, are used to complete the first lifting stage, and lift the wafer to a distance of 0.5 to 3 mm from the electrostatic chuck to separate the wafer from the electrostatic ...

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Abstract

The invention discloses a wafer jacking device and a jacking method thereof. The jacking method comprises the steps of: completing a first jacking stage by using first jacking assemblies, and driving jacking rod assemblies to ascend by means of miniature cylinders so as to jack a wafer, thereby separating the wafer and an electrostatic suction cup; and completing a second jacking stage by using a second jacking assembly, and further driving the miniature cylinders and the jacking rod assemblies to jack the wafer to a set distance by means of a cylinder. According to the wafer jacking device and the jacking method thereof, the first stage of the jacking process is realized by adopting the miniature cylinders, the jacking heights and jacking speeds of jacking rods are adjusted by means of the miniature cylinders so as to obtain the same jacking time and jacking force, the strokes of the miniature cylinders are short, the gentle and stable jacking process can be realized through reasonably controlling air intake amount of the miniature cylinders, the wafer is prevented from being damaged, the sizes of the miniature cylinders are small, the space is saved, the first jacking stage is realized by adopting the plurality of miniature cylinders, the second jacking stage is realized by adopting one cylinder, the jacking is more flexible, the cost is reduced, a helium gas does not need to be used, and the risk of contaminating the wafer is avoided.

Description

technical field [0001] The invention relates to a wafer jacking device and a jacking method thereof. Background technique [0002] In the plasma etching equipment, the electrostatic chuck uses static electricity to firmly absorb and fix the wafer, and the wafer is fixed on the electrostatic chuck to perform the corresponding etching operation. After the etching operation is completed, the wafer needs to be taken out for subsequent processing. And only when the electrostatic charge is completely released, the electrostatic chuck no longer has an adsorption force on the wafer, and at this time, the wafer can be lifted from the electrostatic chuck by using the jacking device. Since it is difficult to ensure that the static charge is completely released, if there is still a residual static charge, there is still a local adsorption force. Therefore, when the wafer is lifted, under the interaction of the jacking force and the residual adsorption force, it is easy to cause the wafe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683
CPCH01L21/68742H01L2221/68313
Inventor 龚岳俊黄允文
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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