Photoelectric sensor, display panel and display device

Abstract

The invention provides a photoelectric sensor, which comprises a photoelectric conversion unit used for receiving optical signals and converting the optical signals into electric signals; and an optical processing layer arranged at the light entering side of the photoelectric conversion unit and used for processing the optical signals to reduce luminous flux of light reaching the photoelectric conversion unit. The invention also provides a display panel comprising the photoelectric sensor, and a display device. The photoelectric sensor can be used in high light intensity, so that light intensity range capable of being accurately measured by the display panel and the display device can be improved greatly.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a photoelectric sensor, a display panel and a display device. Background technique [0002] In an OLED panel, a photo sensor is usually set up for fingerprint recognition, touch control, etc., such as Figure 1a with Figure 1b As shown, the traditional photosensor integrated in the display panel is arranged in a small area of ​​the pixel unit formed by the intersection of the data line 1 and the gate line 2. The photosensor circuit is various, and the mainstream is 2T1C circuit, including: a photoelectric sensor Transistor 3 (photo TFT) and a readout transistor 4 (readout TFT), the phototransistor 3 is used to turn off during the photosensitive period and will always generate leakage current stored in the capacitor C under light; the readout transistor 4 is used for each Periodically open to read out the electric signal stored in the capacitor, and then obtain the ...

AI Technical Summary

Problems solved by technology

[0003] Found in practical applications using existing photoelectric sensors: see image 3 , image 3 The abscissa in the graph represents the brightness corresponding to the light intensity, and the ordinate represents the leakage current. Different curves 1-4 correspond to the turn-on voltages of different phototransistors (curves 1-4 correspond to turn-on voltages of 0V~3V), from image 3 It can be seen that the leakage current changes with the intensity of the light source. For example, when the light intensity is low, the leakage current changes relatively large with the change of the light intensity, so it can be detected; however, in Larger light intensity (for example: the corresponding brightness is 4000cd / m 2 Above) the change of the leakage current is small with the increase of the light intensity, therefore, it is not easy to be detected

[0004] Therefore, the existing photoelectric sensor cannot be applied under high light intensity, therefore, there is an urgent need for a photoelectric sensor that can be applied under high light intensity.

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