Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device includes a first channel region disposed over a substrate, a first source region and a first drain region disposed over the substrate and connected to the first channel region such that the first channel region is disposed between the first source region and the first drain region, a gate dielectric layer disposed on and wrapping the first channel region, a gate electrode layer disposed on the gate dielectric layer and wrapping the first channel region, and a second source region and a second drain region disposed over the substrate and below the first source region and the first drain region, respectively. The second source region and the second drain region are in contact with the gate dielectric layer. A lattice constant of the first source region and the first drain region is different from a lattice constant of the second source region and the second drain region. The embodiment of the invention relates to the semiconductor device with a gate-all-around structure and a menufacturing process thereof.

Description

Technical field [0001] The embodiment of the present invention relates to a semiconductor integrated circuit, and more specifically to a semiconductor device having a gate-all-around structure and its manufacturing process. Background technique [0002] As the semiconductor industry enters the nanotechnology process node in the pursuit of higher device density, higher performance and lower cost, challenges from manufacturing and design issues have caused challenges such as fin FETs (FinFETs) and full circle gates. (GAA) Development of three-dimensional designs of FETs such as multi-gate field effect transistors (FETs). In a FinFET, the gate electrode is adjacent to the three sides of the channel region with the gate dielectric layer interposed therebetween. Since the gate structure surrounds (surrounds) the fin on three surfaces, the transistor basically has three gates that control the current through the fin or channel region. Unfortunately, the fourth side and bottom of the ...

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Problems solved by technology

Unfortunately, the fourth side, the bottom, of the channel is away from the gate electrode and thus is not tightly controlled by the gate

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