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FinFET device and method of forming the same

A fin field effect, transistor technology, applied in transistors, electric solid state devices, semiconductor devices and other directions

Inactive Publication Date: 2017-07-18
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although existing FinFET devices and methods of forming them are generally adequate for their intended purposes, they are not completely satisfactory in all respects

Method used

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  • FinFET device and method of forming the same
  • FinFET device and method of forming the same
  • FinFET device and method of forming the same

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Embodiment Construction

[0009] The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these components and arrangements are examples only and are not intended to be limiting. For example, in the following description, the formation of a second feature over or on a first feature may include embodiments in which the second feature is formed in direct contact with the first feature, and may also include that additional features may be formed between the second feature and the first feature. An embodiment is formed between the first features such that the second feature may not be in direct contact with the first feature. In addition, the present invention may repeat reference numerals and / or letters in various instances. This repetition is for simplicity and clarity and does not in itself indicate a r...

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Abstract

Provided is a FinFET device including a substrate having at least one fin, first and second gate stacks, first and second strained layers, first and second dielectric layers, and first and second connectors. The first and second gate stacks are across the fin. The first and second strained layers are respectively aside the first and second gate stacks. The first and second dielectric layer are respectively over the first and second strained layers, and the top surface of the first dielectric layer is lower than the top surface of the second dielectric layer. The first connector is through the first dielectric layer and is electrically connected to the first strained layer. The second connector is through the second dielectric layer and is electrically connected to the second strained layer. Besides, the width of the second connector is greater than the width of the first connector.

Description

technical field [0001] Embodiments of the present invention relate to a Fin Field Effect Transistor (FinFET) device and a forming method thereof. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design techniques have enabled ICs to evolve from generation to generation. Compared with the previous generation, the next generation of ICs is smaller in size and more complex in circuit. During the evolution of integrated circuits, functional density (ie, the number of interconnected devices per chip area) has continued to increase, while geometry size (ie, the smallest device or line that can be produced using a fabrication process) has continued to shrink. Such scaling down processes generally provide benefits by increasing production efficiency and reducing associated costs. [0003] This scaling down increases the complexity of handling and manufacturing ICs, and similar ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/088H01L21/8234
CPCH01L21/823431H01L21/823475H01L27/0886H01L21/823821H01L21/823871H01L29/41791H01L29/66545H01L29/7848H01L29/785H01L21/823814H01L23/535H01L27/0924H01L29/0847H01L29/1608H01L29/161H01L29/165
Inventor 张哲诚林志翰曾鸿辉
Owner TAIWAN SEMICON MFG CO LTD