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Atomic layer etching in continuous plasma

A plasma and etching technology, applied in coating, metal material coating process, semiconductor/solid-state device manufacturing, etc.

Active Publication Date: 2017-08-15
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Conventional plasma etch processes typically use reactive ions and reactive chemicals at high etch rates, but due to the reactivity of the plasma, etch processes often result in undesired etching of layers underlying the material to be etched

Method used

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  • Atomic layer etching in continuous plasma
  • Atomic layer etching in continuous plasma
  • Atomic layer etching in continuous plasma

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Embodiment Construction

[0046] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the presented embodiments. The disclosed embodiments may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail to unnecessarily obscure the disclosed embodiments. While the disclosed embodiments will be described in conjunction with specific embodiments, it will be understood that they are not intended to be limiting of the disclosed embodiments.

[0047] Atomic layer etching (ALE) is a method for controlling etching behavior at the atomic level. ALE is a technique that removes thin layers of material using self-limiting sequential reaction steps. This can be accomplished by surface modification operations (ie, chemisorption by radical reactions of reactive chemicals on the substrate surface), followed by removal operations (ie, ion-assisted etching using inert, n...

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Abstract

The invention relates to atomic layer etching in continuous plasma. Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries used to etch the material involve flow of continuous plasma. Process conditions permit controlled, self-limiting anisotropic etching without alternating between chemistries used to etch material on a substrate. A well-controlled etch front allows a synergistic effect of reactive radicals and inert ions to perform the etching, such that material is etched when the substrate is modified by reactive radicals and removed by inert ions, but not etched when material is modified by reactive radicals but no inert ions are present, or when inert ions are present but material is not modified by reactive radicals.

Description

technical field [0001] The present invention relates to the field of semiconductors, and more particularly to atomic layer etching in continuous plasma. Background technique [0002] Atomic scale plasma etching has been studied for many years. Conventional plasma etch processes are typically performed at high etch rates using reactive ions and reactive chemicals, but due to the reactivity of the plasma, etch processes often result in undesired etching of layers underlying the material to be etched. Contents of the invention [0003] Provided herein are methods and apparatus for etching a substrate using a self-limiting reaction based on a removal energy threshold determined by evaluating the material to be etched and the chemistry used to etch the material. Embodiments involve the flow of continuous plasma under process conditions to allow controlled self-limiting anisotropic etching without alternating between chemistries used to etch materials on a substrate. According...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065
CPCH01L21/3065H01J37/32082H01L21/67259C23C16/45536C23C16/45544H01J37/32449H01J37/32697H01J37/32926H01J2237/332H01J2237/334H01L21/31122H01L21/32136H01L21/02315H01L21/30608C23C16/52H01J37/32119H01J37/32183H01J37/32715H01L21/3085H01L21/31144H01L21/32139H01L21/67069H01L21/6833
Inventor 谭忠魁张依婷吴垠徐晴符谦山口叶子崔麟
Owner LAM RES CORP