Device and method for detecting semiconductor defects by exciting photoluminescence with dual light sources
A technology of photoluminescence and detection method, which is applied in the field of semiconductor material defect detection, and can solve problems such as inability to obtain deep energy level defects.
Active Publication Date: 2019-09-10
EAST CHINA NORMAL UNIV
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[0002] Photoluminescence detection of defects in semiconductor materials is mainly to use excitation light with light energy greater than the forbidden band width to excite additional carriers, by measuring the carrier radiation transition spectrum between bands, through different conditions (such as light intensity, temperature, etc.) to qualitatively study the energy level position and distribution of defects, but this method can only detect the characteristics of shallow energy level defects, and cannot obtain the information of deep energy level defects
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[0022] The present invention will be further described in detail in conjunction with the following specific embodiments and accompanying drawings. The process, conditions, experimental methods, etc. for implementing the present invention, except for the content specifically mentioned below, are common knowledge and common knowledge in this field, and the present invention has no special limitation content.
[0023] see figure 1 , the dual light source excitation photoluminescence detection semiconductor deep level defect detection device of the present invention comprises: a first laser light source 1, a second laser light source 2, a semiconductor sample 3, a first lens 4, a first beam splitter 5, a second beam splitter Sheet 6, mirror 7, first filter 8, second filter 9, second lens 10, monochromator 11, photodetector 12 and computer 13. The first laser light source 1 is focused to the surface of the semiconductor sample 3 through the first beam splitter 5 to the first lens ...
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Abstract
The invention discloses a device for detecting semiconductor defects through dual-light-source stimulation photoluminescence. The device comprises a first laser light source, a second laser light source, a semiconductor sample, a first lens, a first beam splitter, a second beam splitter, a reflector, a first light filter, a second light filter, a second lens, a monochromator, a photoelectric detector and a computer. The first laser light source stimulates photoluminescence of the semiconductor sample; the second laser light source makes deep-level defects in a semiconductor sample material electronically saturated; the photoelectric detector finally detects light signals of a light outlet of the monochromator to obtain a photoluminescence spectrum obtained by a dual-light-source stimulation sample, and comparing a luminescence spectrum obtained by a single-light-source luminescence sample with a luminescence spectrum obtained by a double-light-source luminescence sample, it is determined whether the deep-level defects in the semiconductor sample are an effective carrier recombination center. The invention further discloses a method for detecting the semiconductor defects through dual-light-source stimulation photoluminescence.
Description
technical field [0001] The invention belongs to semiconductor material defect detection technology, and relates to a device and a detection method for detecting semiconductor defects by stimulating photoluminescence with dual light sources. Background technique [0002] Photoluminescence detection of defects in semiconductor materials is mainly to use excitation light with light energy greater than the forbidden band width to excite additional carriers, by measuring the carrier radiation transition spectrum between bands, through different conditions (such as light intensity, temperature, etc.) to qualitatively study the energy level position and distribution of defects, but this method can only detect the characteristics of shallow energy level defects, and cannot obtain the information of deep energy level defects. [0003] In order to simultaneously detect the characteristics of shallow-level defects and deep-level defects, the present invention proposes a device and a de...
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IPC IPC(8): G01N21/63
Inventor 胡小波陈少强翁国恩
Owner EAST CHINA NORMAL UNIV