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Method of solving error in data retention in Nand flash memory and system therefor
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A technology of data retention and flash memory, applied in the field of storage, can solve problems such as correction, achieve low cost, ensure integrity and correctness, and be easy to implement
Inactive Publication Date: 2017-08-29
惠州佰维存储科技有限公司
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But when there are many bits of block errors in the flash memory, ECC cannot correct the block errors at this time
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Embodiment 1
[0046] Please refer to figure 2 , Embodiment 1 of the present invention is:
[0047] A kind of method that solves the Nand flash memory data keeps taking place error, can guarantee the integrity and the correctness of the data in the Nand flash memory, including:
[0048] S1. When the Nand flash memory is in a power-on or standby state, sequentially read one piece of the Nand flash memory at preset time intervals. The preset time may be 5s, that is, a block in the Nand flash memory is read every 5s. Of course, the value of the preset time may also be set as required. When reading, read according to the mapping relationship in the mapping table.
[0049] S2. According to the read operation, it is judged whether the bits in the block that need to be corrected by the error correction code are greater than the preset value; if yes, proceed to step S3, and if not, continue to read the next block. In this embodiment, the size of the preset value can be set as required.
[0050]...
Embodiment 2
[0055] Please refer to Figure 4 , Embodiment 2 of the present invention is: a kind of system that solves the data retention that Nand flash memory takes place error, comprises:
[0056] The reading module 1 is used to sequentially read a piece of the Nand flash memory at preset time intervals when the Nand flash memory is in a power-on or standby state;
[0057] Judging module 2, used to judge whether the bit that needs to be corrected by the error correction code in the block is greater than a preset value according to the read operation;
[0058] Store module 3, be used for if, then store the data of described one in a free block of Nand flash memory.
[0059] Further, it also includes:
[0060] Erasing module 4, is used for erasing the data in described one;
[0061] The writing module 5 is used for writing data in the block after the data is erased.
[0062] Further, the reading module 1 is specifically configured to sequentially read a block in the Nand flash memory ac...
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Abstract
The invention discloses a method of solving errors in data retention in a Nand flash memory and a system therefor. The method includes the steps of: when the Nand flash memory is started or standby, performing reading operation to one block in the Nand flash memory at a preset time interval; according to the reading operation, determining whether the number of bits, which need to be corrected by means of an error correcting code, in the block is larger than a preset value or not, if true, storing the data in the block to a free block in the Nand flash memory. By transferring the data in the block, of which the number of bits in error is larger than a preset value, is transferred into other free blocks in the Nand flash memory, thus guaranteeing completeness and correctness of the data in the Nand flash memory.
Description
technical field [0001] The invention relates to the field of storage technology, in particular to a method and system for solving data retention errors in Nand flash memory. Background technique [0002] TLC (Triple-Level Cell) flash memory is a kind of Nand flash memory that is widely used in the market at present. TLC uses charges of different potentials, and a floating gate stores 3 bytes of information, with a lifespan of about 500-1000 times of erasing and writing. As time goes by, TLC flash memory will experience data retention (Data Retention) errors. Errors in data retention are mainly caused by two reasons: first, the breakdown of the gate oxide layer over time leads to an increase in the low-field leakage current, and the increase in the leakage current leads to a weakening of the ability to transfer the cell’s storage threshold voltage. As a result, data retention errors occur; the second is that erasing and writing operations will also cause the oxide layer to c...
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