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Thin film transistor test element group, test method and array substrate

A technology for thin-film transistors and test component groups, which is applied in the direction of transistors, single semiconductor device testing, electrical components, etc., and can solve problems that need to be improved

Inactive Publication Date: 2019-11-05
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the current thin film transistor test component group, test method and array substrate still need to be improved

Method used

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  • Thin film transistor test element group, test method and array substrate
  • Thin film transistor test element group, test method and array substrate
  • Thin film transistor test element group, test method and array substrate

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Embodiment Construction

[0027] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0028] In one aspect of the present invention, the present invention provides a thin film transistor test element set. The thin film transistor test element group can be a test element group arranged in the non-display area of ​​the array substrate, and is used to evaluate the performance of the thin film transistor in the display area of ​​the array substrate by testing the thin film transistor test element group before the array substrate is boxed. switch characteristics. refer to figure 1 , the thin film transistor test element set ...

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Abstract

The invention discloses a thin film transistor test element group, a test method and an array substrate. The thin film transistor test element group includes: a substrate; a thin film transistor, the thin film transistor is arranged on the substrate, and the thin film transistor includes an active layer, a source electrode, a drain electrode and a gate; a light shielding layer, the light shielding layer layer is disposed on the side of the active layer away from the substrate, the light-shielding layer is disposed corresponding to the active layer; a first electrode layer, the first electrode layer is connected to the drain; and a second Two electrode layers, the second electrode layer is insulated on a side of the first electrode layer away from the substrate, and the second electrode is connected to at least one of the drain and the source. Therefore, the accuracy of the data when the thin film transistor test element group performs the simulation test can be improved.

Description

technical field [0001] The invention relates to the display field, in particular to a thin film transistor test element group, a test method and an array substrate. Background technique [0002] With the development of display technology and semiconductor technology, people have higher and higher requirements for the image quality of display screens, that is, LCD screens and other display screens are required to have a high enough pixel density and a wide color gamut to meet the requirements for image quality. The clarity and picture saturation requirements. However, for liquid crystal display devices, the higher and higher pixel density (Pixels Per Inch, PPI) makes it easier to produce defective liquid crystal screens. However, in a display device with high pixel density, many defects are related to the switching characteristics of thin film transistors (TFTs) on the array substrate. Therefore, if the electrical characteristics of the TFT switches in the display area can ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2621G09G3/006H01L29/786H01L29/78618H01L29/78633
Inventor 马彬崔子巍尹岩岩田鹏程李鑫
Owner BOE TECH GRP CO LTD