A plasma processing device

Abstract

The present invention discloses a plasma processing apparatus, which comprises a reaction chamber. An upper electrode and a lower electrode are arranged in the reaction chamber. A power supply device is arranged below the lower electrode and is used for applying a radio frequency (RF) power to the lower electrode. A pipeline and an electric wire are arranged below the lower electrode. The power supply device comprises a hollow RF conveying pipeline. The pipeline and the electric wire are arranged inside the hollow RF conveying pipeline. In this way, the space inside the lower electrode is greatly saved, so that other parts can be improved in the larger space of the lower electrode. Meanwhile, a liquid conveying pipeline, a gas conveying pipeline and electric wires, which are made of soft materials, are placed inside the RF conveying pipeline of a relatively fixed shape. Therefore, the influence of the distance change between the RF conveying pipeline and a grounding ring, due to the change in shape or position during the process, on the electric field distribution inside the reaction chamber, can be avoided.

Description

technical field [0001] The invention relates to the field of regulating electric field distribution in a plasma processing chamber, in particular to the technical field capable of realizing stable and controllable electric field distribution in a plasma processing chamber. Background technique [0002] A plasma processing device generally includes a cylindrical or other shaped reaction chamber, a lower electrode for placing a substrate to be processed is provided at the bottom of the reaction chamber, and an upper electrode is provided at the top of the reaction chamber. The upper electrode is arranged opposite to the lower electrode and forms a plasma generation space therebetween. By applying a radio frequency voltage between the upper electrode and the lower electrode, the gas passing into the reaction chamber forms a plasma, and then the gas placed on the lower electrode can be The substrate to be processed on the substrate is processed. [0003] The electromagnetic fie...

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Problems solved by technology

In the plasma treatment process, it is not only necessary to apply radio frequency power to the lower electrode, but also to set up a temperature adjustment system in the lower electrode in order to maintain the temperature required by the process. Cables and other lines, many lines will make the inner space of the lower electrode crowded, and because the lower electrode is surrounded by a grounding ring, while the pipelines, cables and other lines are relatively soft, the distance between them and the grounding ring is easy to change, which will affect the The electric field distribution above the bottom electrode affects

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