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Method for calculating non-ionization energy loss of heterojunction bipolar transistors

A heterojunction bipolar, energy loss technology, applied in the field of environmental engineering, to achieve the effect of saving test funds and costs

Active Publication Date: 2017-09-15
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, only considering the contribution of displacement damage to NIEL is limiting

Method used

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  • Method for calculating non-ionization energy loss of heterojunction bipolar transistors
  • Method for calculating non-ionization energy loss of heterojunction bipolar transistors
  • Method for calculating non-ionization energy loss of heterojunction bipolar transistors

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Embodiment Construction

[0039] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0040] A method for calculating the non-ionization energy loss of a heterojunction bipolar transistor provided in an embodiment of the present invention, the method includes the following steps:

[0041] The first step is to use SRIM software to simulate the process of InP / InGaAs HBT devices entering the device under the space radiation environment, and use the simulation results to calculate the relationship between the non-ionization energy loss in the device...

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Abstract

The invention discloses a method for calculating non-ionization energy loss of heterojunction bipolar transistors, and relates to the technical field of environment engineering. According to the method, SRIM software is utilized to simulate a space radiation particle incidence InP / InGaAs HBT device process, a relationship between non-ionization energy loss in devices and incidence particle energy can be accurately calculated to predict performance degradation conditions of the devices in a space radiation environment, and a feature curve can be determined through few experiments, so that the experiment expenditure and cost are saved.

Description

technical field [0001] The invention relates to the technical field of environmental engineering, in particular to a calculation method for the non-ionization energy loss of a heterojunction bipolar transistor. Background technique [0002] The indium phosphide heterojunction bipolar transistor InP HBT has the advantages of ultra-high frequency characteristics, large power density and good linearity. In the communication system, the radio frequency front-end circuit plays the role of mutual conversion between wireless signals and digital signals, thus forming a transceiver system, including low-noise amplifiers, power amplifiers, voltage-controlled oscillators, mixers and other circuits, and in these circuits In terms of implementation, InP-based devices and circuits have advantages that other devices do not have. Therefore, InP-based devices and circuits will be widely used in military fields such as satellites and radars in the future. [0003] InP devices and circuits w...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/20
Inventor 吕红亮赵小红赵曼丽张义门张玉明
Owner XIDIAN UNIV